Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy
文献类型：期刊论文
| 作者 | Dai, Jiuxiang5; Yang, Teng4; Jin, Zhitong5; Zhong, Yunlei5; Hu, Xianyu5; Zou, Jingyi3; Xu, Weigao2; Li, Tao5; Lin, Yuxuan1; Zhang, Xu3 |
| 刊名 | NANO RESEARCH
 |
| 出版日期 | 2022-06-03 |
| 页码 | 6 |
| ISSN号 | 1998-0124 |
| 关键词 | two-dimensional materials van der Waals epitaxy indium arsenide nonlayered material |
| DOI | 10.1007/s12274-022-4543-8 |
| 通讯作者 | Zhou, Lin(linzhou@sjtu.edu.cn) |
| 英文摘要 | Two-dimensional (2D) indium arsenide (InAs) is promising for future electronic and optoelectronic applications such as high-performance nanoscale transistors, flexible and wearable devices, and high-sensitivity broadband photodetectors, and is advantageous for its heterogeneous integration with Si-based electronics. However, the synthesis of 2D InAs single crystals is challenging because of the nonlayered structure. Here we report the van der Waals epitaxy of 2D InAs single crystals, with their thickness down to 4.8 nm, and their lateral sizes up to similar to 37 mu m. The as-grown InAs flakes have high crystalline quality and are homogenous. The thickness can be tuned by growth time and temperature. Moreover, we explore the thickness-dependent optical properties of InAs flakes. Transports measurement reveals that 2D InAs possesses high conductivity and high carrier mobility. Our work introduces InAs to 2D materials family and paves the way for applying 2D InAs in high-performance electronics and optoelectronics. |
| 资助项目 | National Key Basic Research Program of China[2021YFA1401400] ; Shanghai Jiao Tong University ; National Natural Science Foundation of China[52103344] ; National Natural Science Foundation of China[52031014] ; National Natural Science Foundation of China[22022507] ; National Natural Science Foundation of China[51973111] ; National Key Research and Development Program of China[2017YFA0206301] ; Beijing National Laboratory for Molecular Sciences[BNLMS202004] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | TSINGHUA UNIV PRESS |
| WOS记录号 | WOS:000805729300003 |
| 资助机构 | National Key Basic Research Program of China ; Shanghai Jiao Tong University ; National Natural Science Foundation of China ; National Key Research and Development Program of China ; Beijing National Laboratory for Molecular Sciences |
| 源URL | [http://ir.imr.ac.cn/handle/321006/174266]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhou, Lin |
| 作者单位 | 1.Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA 2.Nanjing Univ, Sch Chem & Chem Engn, Key Lab Mesoscop Chem, Nanjing 210023, Peoples R China 3.Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 5.Shanghai Jiao Tong Univ, Frontiers Sci Ctr Transformat Mol, Sch Chem & Chem Engn, Shanghai 200240, Peoples R China |
| 推荐引用方式 GB/T 7714 | Dai, Jiuxiang,Yang, Teng,Jin, Zhitong,et al. Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy[J]. NANO RESEARCH,2022:6. |
| APA | Dai, Jiuxiang.,Yang, Teng.,Jin, Zhitong.,Zhong, Yunlei.,Hu, Xianyu.,...&Zhou, Lin.(2022).Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy.NANO RESEARCH,6. |
| MLA | Dai, Jiuxiang,et al."Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy".NANO RESEARCH (2022):6. |
入库方式： OAI收割
来源：金属研究所
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