Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions
文献类型：期刊论文
| 作者 | Guo, Xiaokun2,3; Yang, Bing3; Lu, Jiaqi2,3; Li, Haining2,3; Huang, Nan3; Liu, Lusheng3; Jiang, Xin1,3 |
| 刊名 | JOURNAL OF MATERIALS CHEMISTRY C
 |
| 出版日期 | 2022-05-26 |
| 页码 | 10 |
| ISSN号 | 2050-7526 |
| DOI | 10.1039/d2tc01308h |
| 通讯作者 | Yang, Bing(byang@imr.ac.cn) ; Jiang, Xin(xjiang@imr.ac.cn) |
| 英文摘要 | Charge state regulation of color centers in diamond has attracted considerable attention owing to the difference in their optical emission. To date, to convert the neutrally-charged type to the negatively-charged type in diamond has remained a challenge. To address this issue, (100) micro-crystalline diamond membranes containing silicon vacancy (SiV) centers were deposited on n-type silicon substrates, forming diamond/n-Si heterojunctions. Applying a bias voltage on the heterojunctions was carried out to make carriers transport across the diamond/Si interface. Compared with the non-rectifying diamond/n(-)-Si heterojunction, the diamond/n(+)-Si heterojunction shows a rectification ratio of about two orders of magnitude. The SiV- photoluminescence (PL) intensity remains unchanged at the reverse bias in the diamond/n(+)-Si heterojunction, while it increases by two fold at the forward bias, larger than that in the diamond/n(-)-Si heterojunction. Such PL variation is consistent with the injection current in both heterojunctions. Detailed band diagram analysis reveals that electron tunneling from the substrate to the diamond contributes to a larger forward current and brighter SiV- PL emission in the n(+)-Si heterojunction. Therefore, our work demonstrates that the heterojunction of diamond with heavily doped n-type materials would enable the population increase of negatively-charged color centers via the electron tunneling effect. |
| 资助项目 | National Natural Science Foundation of China[52172056] ; National Natural Science Foundation of China[51872294] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| 出版者 | ROYAL SOC CHEMISTRY |
| WOS记录号 | WOS:000810165200001 |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/174299]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Yang, Bing; Jiang, Xin |
| 作者单位 | 1.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Inst Met Res IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, Xiaokun,Yang, Bing,Lu, Jiaqi,et al. Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions[J]. JOURNAL OF MATERIALS CHEMISTRY C,2022:10. |
| APA | Guo, Xiaokun.,Yang, Bing.,Lu, Jiaqi.,Li, Haining.,Huang, Nan.,...&Jiang, Xin.(2022).Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions.JOURNAL OF MATERIALS CHEMISTRY C,10. |
| MLA | Guo, Xiaokun,et al."Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions".JOURNAL OF MATERIALS CHEMISTRY C (2022):10. |
入库方式： OAI收割
来源：金属研究所
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