Simulation Study of Performance Degradation in beta-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling
文献类型：期刊论文
| 作者 | Li, Zhipeng; Wang, Quan; Feng, Chun; Wang, Qian; Niu, Di; Jiang, Lijuan; Li, Wei; Xiao, Hongling; Wang, Xiaoliang |
| 刊名 | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
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| 出版日期 | 2021 |
| 卷号 | 10期号:5页码:55005 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31164]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Li, Zhipeng; Wang, Quan; Feng, Chun; Wang, Qian; Niu, Di; Jiang, Lijuan; Li, Wei; Xiao, Hongling; Wang, Xiaoliang. Simulation Study of Performance Degradation in beta-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling[J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,2021,10(5):55005. |
| APA | Li, Zhipeng; Wang, Quan; Feng, Chun; Wang, Qian; Niu, Di; Jiang, Lijuan; Li, Wei; Xiao, Hongling; Wang, Xiaoliang.(2021).Simulation Study of Performance Degradation in beta-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,10(5),55005. |
| MLA | Li, Zhipeng; Wang, Quan; Feng, Chun; Wang, Qian; Niu, Di; Jiang, Lijuan; Li, Wei; Xiao, Hongling; Wang, Xiaoliang."Simulation Study of Performance Degradation in beta-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling".ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 10.5(2021):55005. |
入库方式： OAI收割
来源：半导体研究所
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