Buckling on Fe-Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism
文献类型：期刊论文
| 作者 | Hu, Haoyue; Xiao, Hongling; Guo, Fen; Wang, Quan; Feng, Chun; Jiang, Lijuan; Wang, Qian; Liu, Hongxin; Wang, Xiaoliang |
| 刊名 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
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| 出版日期 | 2021 |
| 卷号 | 218期号:12页码:2000827 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31208]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Hu, Haoyue; Xiao, Hongling; Guo, Fen; Wang, Quan; Feng, Chun; Jiang, Lijuan; Wang, Qian; Liu, Hongxin; Wang, Xiaoliang. Buckling on Fe-Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2021,218(12):2000827. |
| APA | Hu, Haoyue; Xiao, Hongling; Guo, Fen; Wang, Quan; Feng, Chun; Jiang, Lijuan; Wang, Qian; Liu, Hongxin; Wang, Xiaoliang.(2021).Buckling on Fe-Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,218(12),2000827. |
| MLA | Hu, Haoyue; Xiao, Hongling; Guo, Fen; Wang, Quan; Feng, Chun; Jiang, Lijuan; Wang, Qian; Liu, Hongxin; Wang, Xiaoliang."Buckling on Fe-Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 218.12(2021):2000827. |
入库方式： OAI收割
来源：半导体研究所
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