Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth
文献类型：期刊论文
| 作者 | Chen, Li; Lin, Wei; Chen, Hangyang; Xu, Houqiang; Guo, Chenyu; Liu, Zhibin; Yan, Jianchang; Sun, Jie; Liu, Huan; Wu, Jason; Guo, Wei; Kang, Junyong; Ye, Jichun |
| 刊名 | CRYSTAL GROWTH & DESIGN
 |
| 出版日期 | 2021 |
| 卷号 | 21期号:5页码:2911-2919 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31272]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Chen, Li; Lin, Wei; Chen, Hangyang; Xu, Houqiang; Guo, Chenyu; Liu, Zhibin; Yan, Jianchang; Sun, Jie; Liu, Huan; Wu, Jason; Guo, Wei; Kang, Junyong; Ye, Jichun. Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth[J]. CRYSTAL GROWTH & DESIGN,2021,21(5):2911-2919. |
| APA | Chen, Li; Lin, Wei; Chen, Hangyang; Xu, Houqiang; Guo, Chenyu; Liu, Zhibin; Yan, Jianchang; Sun, Jie; Liu, Huan; Wu, Jason; Guo, Wei; Kang, Junyong; Ye, Jichun.(2021).Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth.CRYSTAL GROWTH & DESIGN,21(5),2911-2919. |
| MLA | Chen, Li; Lin, Wei; Chen, Hangyang; Xu, Houqiang; Guo, Chenyu; Liu, Zhibin; Yan, Jianchang; Sun, Jie; Liu, Huan; Wu, Jason; Guo, Wei; Kang, Junyong; Ye, Jichun."Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth".CRYSTAL GROWTH & DESIGN 21.5(2021):2911-2919. |
入库方式： OAI收割
来源：半导体研究所
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