Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures
文献类型：期刊论文
| 作者 | Fariza, Aqdas; Ji, Xiaoli; Gao, Yaqi; Ran, Junxue; Wang, Junxi; Wei, Tongbo |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2021 |
| 卷号 | 129期号:16页码:165701 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31205]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Fariza, Aqdas; Ji, Xiaoli; Gao, Yaqi; Ran, Junxue; Wang, Junxi; Wei, Tongbo. Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures[J]. JOURNAL OF APPLIED PHYSICS,2021,129(16):165701. |
| APA | Fariza, Aqdas; Ji, Xiaoli; Gao, Yaqi; Ran, Junxue; Wang, Junxi; Wei, Tongbo.(2021).Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures.JOURNAL OF APPLIED PHYSICS,129(16),165701. |
| MLA | Fariza, Aqdas; Ji, Xiaoli; Gao, Yaqi; Ran, Junxue; Wang, Junxi; Wei, Tongbo."Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures".JOURNAL OF APPLIED PHYSICS 129.16(2021):165701. |
入库方式： OAI收割
来源：半导体研究所
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