Ridge-channel AlGaN/GaN normally-off high-electron mobility transistor based on epitaxial lateral overgrowth
文献类型：期刊论文
| 作者 | Ji, Xiaoli; Fariza, Aqdas; Zhao, Jie; Wang, Maojun; Wang, Junxi; Yang, Fuhua; Li, Jinmin; Wei, Tongbo |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2021 |
| 卷号 | 36期号:7页码:75003 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31281]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Ji, Xiaoli; Fariza, Aqdas; Zhao, Jie; Wang, Maojun; Wang, Junxi; Yang, Fuhua; Li, Jinmin; Wei, Tongbo. Ridge-channel AlGaN/GaN normally-off high-electron mobility transistor based on epitaxial lateral overgrowth[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2021,36(7):75003. |
| APA | Ji, Xiaoli; Fariza, Aqdas; Zhao, Jie; Wang, Maojun; Wang, Junxi; Yang, Fuhua; Li, Jinmin; Wei, Tongbo.(2021).Ridge-channel AlGaN/GaN normally-off high-electron mobility transistor based on epitaxial lateral overgrowth.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,36(7),75003. |
| MLA | Ji, Xiaoli; Fariza, Aqdas; Zhao, Jie; Wang, Maojun; Wang, Junxi; Yang, Fuhua; Li, Jinmin; Wei, Tongbo."Ridge-channel AlGaN/GaN normally-off high-electron mobility transistor based on epitaxial lateral overgrowth".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 36.7(2021):75003. |
入库方式： OAI收割
来源：半导体研究所
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