Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate
文献类型：期刊论文
| 作者 | Yan, Yong; Yang, Juehan; Du, Juan; Zhang, Xiaomei; Liu, Yue-Yang; Xia, Congxin; Wei, Zhongming |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2021 |
| 卷号 | 33期号:22页码:2008761 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31274]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Yan, Yong; Yang, Juehan; Du, Juan; Zhang, Xiaomei; Liu, Yue-Yang; Xia, Congxin; Wei, Zhongming. Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate[J]. ADVANCED MATERIALS,2021,33(22):2008761. |
| APA | Yan, Yong; Yang, Juehan; Du, Juan; Zhang, Xiaomei; Liu, Yue-Yang; Xia, Congxin; Wei, Zhongming.(2021).Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate.ADVANCED MATERIALS,33(22),2008761. |
| MLA | Yan, Yong; Yang, Juehan; Du, Juan; Zhang, Xiaomei; Liu, Yue-Yang; Xia, Congxin; Wei, Zhongming."Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate".ADVANCED MATERIALS 33.22(2021):2008761. |
入库方式： OAI收割
来源：半导体研究所
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