High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity-Dependent Negative Photoconductivity
文献类型：期刊论文
| 作者 | Wang, Xinzhe; Pan, Dong; Sun, Mei; Lyu, Fengjiao; Zhao, Jianhua; Chen, Qing |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2021 |
| 卷号 | 13期号:22页码:26187-26195 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31251]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang, Xinzhe; Pan, Dong; Sun, Mei; Lyu, Fengjiao; Zhao, Jianhua; Chen, Qing. High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity-Dependent Negative Photoconductivity[J]. ACS APPLIED MATERIALS & INTERFACES,2021,13(22):26187-26195. |
| APA | Wang, Xinzhe; Pan, Dong; Sun, Mei; Lyu, Fengjiao; Zhao, Jianhua; Chen, Qing.(2021).High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity-Dependent Negative Photoconductivity.ACS APPLIED MATERIALS & INTERFACES,13(22),26187-26195. |
| MLA | Wang, Xinzhe; Pan, Dong; Sun, Mei; Lyu, Fengjiao; Zhao, Jianhua; Chen, Qing."High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity-Dependent Negative Photoconductivity".ACS APPLIED MATERIALS & INTERFACES 13.22(2021):26187-26195. |
入库方式： OAI收割
来源：半导体研究所
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