Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells
文献类型：期刊论文
| 作者 | Ben, Yuhao; Liang, Feng; Zhao, Degang; Wang, Xiaowei; Yang, Jing; Liu, Zongshun; Chen, Ping |
| 刊名 | NANOMATERIALS
 |
| 出版日期 | 2021 |
| 卷号 | 11期号:4页码:1023 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31173]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Ben, Yuhao; Liang, Feng; Zhao, Degang; Wang, Xiaowei; Yang, Jing; Liu, Zongshun; Chen, Ping. Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells[J]. NANOMATERIALS,2021,11(4):1023. |
| APA | Ben, Yuhao; Liang, Feng; Zhao, Degang; Wang, Xiaowei; Yang, Jing; Liu, Zongshun; Chen, Ping.(2021).Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells.NANOMATERIALS,11(4),1023. |
| MLA | Ben, Yuhao; Liang, Feng; Zhao, Degang; Wang, Xiaowei; Yang, Jing; Liu, Zongshun; Chen, Ping."Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells".NANOMATERIALS 11.4(2021):1023. |
入库方式： OAI收割
来源：半导体研究所
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