Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth
文献类型：期刊论文
| 作者 | Wang, Xiaowei; Liang, Feng; Zhao, De-gang; Liu, Zongshun; Zhu, Jianjun; Peng, Liyuan; Yang, Jing |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2021 |
| 卷号 | 548页码:149272 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31190]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Wang, Xiaowei; Liang, Feng; Zhao, De-gang; Liu, Zongshun; Zhu, Jianjun; Peng, Liyuan; Yang, Jing. Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth[J]. APPLIED SURFACE SCIENCE,2021,548:149272. |
| APA | Wang, Xiaowei; Liang, Feng; Zhao, De-gang; Liu, Zongshun; Zhu, Jianjun; Peng, Liyuan; Yang, Jing.(2021).Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth.APPLIED SURFACE SCIENCE,548,149272. |
| MLA | Wang, Xiaowei; Liang, Feng; Zhao, De-gang; Liu, Zongshun; Zhu, Jianjun; Peng, Liyuan; Yang, Jing."Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth".APPLIED SURFACE SCIENCE 548(2021):149272. |
入库方式： OAI收割
来源：半导体研究所
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