中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector

文献类型:期刊论文

作者Wang, Baibin;   Liu, Zongshun;   Zhao, Degang;   Liang, Feng;   Yang, Jing;   Chen, Ping
刊名OPTICAL MATERIALS EXPRESS
出版日期2021
卷号11期号:6页码:1614-1621
语种英语
源URL[http://ir.semi.ac.cn/handle/172111/31290]  
专题半导体研究所_光电子研究发展中心
推荐引用方式
GB/T 7714
Wang, Baibin; Liu, Zongshun; Zhao, Degang; Liang, Feng; Yang, Jing; Chen, Ping. Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector[J]. OPTICAL MATERIALS EXPRESS,2021,11(6):1614-1621.
APA Wang, Baibin; Liu, Zongshun; Zhao, Degang; Liang, Feng; Yang, Jing; Chen, Ping.(2021).Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector.OPTICAL MATERIALS EXPRESS,11(6),1614-1621.
MLA Wang, Baibin; Liu, Zongshun; Zhao, Degang; Liang, Feng; Yang, Jing; Chen, Ping."Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector".OPTICAL MATERIALS EXPRESS 11.6(2021):1614-1621.

入库方式: OAI收割

来源:半导体研究所

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