Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector
文献类型:期刊论文
作者 | Wang, Baibin; Liu, Zongshun; Zhao, Degang; Liang, Feng; Yang, Jing; Chen, Ping |
刊名 | OPTICAL MATERIALS EXPRESS
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出版日期 | 2021 |
卷号 | 11期号:6页码:1614-1621 |
语种 | 英语 |
源URL | [http://ir.semi.ac.cn/handle/172111/31290] ![]() |
专题 | 半导体研究所_光电子研究发展中心 |
推荐引用方式 GB/T 7714 | Wang, Baibin; Liu, Zongshun; Zhao, Degang; Liang, Feng; Yang, Jing; Chen, Ping. Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector[J]. OPTICAL MATERIALS EXPRESS,2021,11(6):1614-1621. |
APA | Wang, Baibin; Liu, Zongshun; Zhao, Degang; Liang, Feng; Yang, Jing; Chen, Ping.(2021).Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector.OPTICAL MATERIALS EXPRESS,11(6),1614-1621. |
MLA | Wang, Baibin; Liu, Zongshun; Zhao, Degang; Liang, Feng; Yang, Jing; Chen, Ping."Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector".OPTICAL MATERIALS EXPRESS 11.6(2021):1614-1621. |
入库方式: OAI收割
来源:半导体研究所
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