中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength application

文献类型:期刊论文

作者Li, Xiuli;   Peng, Linzhi;   Liu, Zhi;   Zhou, Zhiqi;   Zheng, Jun;   Xue, Chunlai;   Zuo, Yuhua;   Chen, Baile;   Cheng, Buwen
刊名PHOTONICS RESEARCH
出版日期2021
卷号9期号:4页码:494-500
源URL[http://ir.semi.ac.cn/handle/172111/31311]  
专题半导体研究所_光电子研究发展中心
推荐引用方式
GB/T 7714
Li, Xiuli; Peng, Linzhi; Liu, Zhi; Zhou, Zhiqi; Zheng, Jun; Xue, Chunlai; Zuo, Yuhua; Chen, Baile; Cheng, Buwen. 30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength application[J]. PHOTONICS RESEARCH,2021,9(4):494-500.
APA Li, Xiuli; Peng, Linzhi; Liu, Zhi; Zhou, Zhiqi; Zheng, Jun; Xue, Chunlai; Zuo, Yuhua; Chen, Baile; Cheng, Buwen.(2021).30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength application.PHOTONICS RESEARCH,9(4),494-500.
MLA Li, Xiuli; Peng, Linzhi; Liu, Zhi; Zhou, Zhiqi; Zheng, Jun; Xue, Chunlai; Zuo, Yuhua; Chen, Baile; Cheng, Buwen."30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength application".PHOTONICS RESEARCH 9.4(2021):494-500.

入库方式: OAI收割

来源:半导体研究所

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