Phase Shift Induced by Gate-Controlled Quantum Capacitance in Graphene FET
文献类型：期刊论文
| 作者 | Li, Jiaqi; Mao, Xurui; Gu, Xiaowen; Xie, Sheng; Geng, Zhaoxin; Chen, Hongda |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2021 |
| 卷号 | 42期号:4页码:601-604 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31309]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Li, Jiaqi; Mao, Xurui; Gu, Xiaowen; Xie, Sheng; Geng, Zhaoxin; Chen, Hongda. Phase Shift Induced by Gate-Controlled Quantum Capacitance in Graphene FET[J]. IEEE ELECTRON DEVICE LETTERS,2021,42(4):601-604. |
| APA | Li, Jiaqi; Mao, Xurui; Gu, Xiaowen; Xie, Sheng; Geng, Zhaoxin; Chen, Hongda.(2021).Phase Shift Induced by Gate-Controlled Quantum Capacitance in Graphene FET.IEEE ELECTRON DEVICE LETTERS,42(4),601-604. |
| MLA | Li, Jiaqi; Mao, Xurui; Gu, Xiaowen; Xie, Sheng; Geng, Zhaoxin; Chen, Hongda."Phase Shift Induced by Gate-Controlled Quantum Capacitance in Graphene FET".IEEE ELECTRON DEVICE LETTERS 42.4(2021):601-604. |
入库方式： OAI收割
来源：半导体研究所
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