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Ultra-Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances

文献类型：期刊论文

作者Yan, Bing1,2; Ning, Bo1,3; Zhang, Guoxin1,2; Zhou, Dahua1; Shi, Xuan1; Wang, Chunxiang1; Zhao, Hongquan1
刊名ADVANCED OPTICAL MATERIALS
出版日期2022-01-22
页码7
ISSN号2195-1071
关键词2D materials GeSe WS (2) heterojunctions optoelectronic properties photodetectors
DOI10.1002/adom.202102413
通讯作者Shi, Xuan(shixuan@cigit.ac.cn) ; Zhao, Hongquan(hqzhao@cigit.ac.cn)
英文摘要Heterostructural engineering of atomically thin 2D materials offers an exciting opportunity to fabricate atomically sharp interfaces for optoelectronic devices. Herein, GeSe/WS2 heterojunction devices composed of 2D WS2 (n-type) and few-layer GeSe (p-type), are fabricated by transferring mechanically exfoliated GeSe to chemical vapor deposition (CVD)-grown WS2. Excellent rectification behavior is observed from the I-V characteristics of the GeSe/WS2 heterojunction devices. The reverse photocurrent increases more rapidly than the forward photocurrent under a 635 nm laser illumination, indicating an effective separation of the photogenerated carriers under a minus bias. A large photocurrent on-off ratio of 10(3) at -5 V bias, a high responsivity (R-lambda) of 1.1 A W-1, a considerable specific detectivity (D*) of 1.3x10(10) Jones, and a high external quantum efficiency (EQE) of 214.8%, are obtained. Owing to the large built-in potential of the heterojunction, efficient charge transfer is achieved from the abrupt interfaces even though vastly different materials are used in the van der Waals (vdW) heterostructure. A convenient route is demonstrated for the preparation of ultra-thin GeSe/WS2 vdW heterojunctions. The results reveal great potential of the present GeSe/WS2 vertical heterojunction for future applications in optoelectronics.
资助项目National Natural Science Foundation of China[61775214] ; Natural Science Foundation of Chongqing, China[cstc2019jcyjzdxm0098] ; Natural Science Foundation of Chongqing, China[cstc2019jcyj-msxmX0387] ; Project of Chongqing Talents ; Youth Innovation Promotion Association CAS
WOS研究方向Materials Science ; Optics
语种英语
出版者WILEY-V C H VERLAG GMBH
WOS记录号WOS:000745532000001
源URL[http://119.78.100.138/handle/2HOD01W0/15062]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Shi, Xuan; Zhao, Hongquan
作者单位1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
2.Univ Chinese Acad Sci, Chongqing Sch, Chongqing 400714, Peoples R China
3.Chongqing Univ Posts & Telecommun, Coll Optoelect Engn, Chongqing 400065, Peoples R China
推荐引用方式
GB/T 7714		 Yan, Bing,Ning, Bo,Zhang, Guoxin,et al. Ultra-Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances[J]. ADVANCED OPTICAL MATERIALS,2022:7.
APA Yan, Bing.,Ning, Bo.,Zhang, Guoxin.,Zhou, Dahua.,Shi, Xuan.,...&Zhao, Hongquan.(2022).Ultra-Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances.ADVANCED OPTICAL MATERIALS,7.
MLA Yan, Bing,et al."Ultra-Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances".ADVANCED OPTICAL MATERIALS (2022):7.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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