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Unconventional Doping Effect Leads to Ultrahigh Average Thermoelectric Power Factor in Cu3SbSe4-Based Composites

文献类型：期刊论文

作者Huang, Yuling3; Zhang, Bin4; Li, Jingwei5,6; Zhou, Zizhen3,7; Zheng, Sikang3; Li, Nanhai3; Wang, Guiwen4; Zhang, De3; Zhang, Daliang5,6; Han, Guang8
刊名ADVANCED MATERIALS
出版日期2022-02-21
页码10
ISSN号0935-9648
关键词carrier mobility chalcopyrites high power factor thermoelectrics unconventional doping
DOI10.1002/adma.202109952
通讯作者Lu, Xu(luxu@cqu.edu.cn) ; Zhou, Xiaoyuan(xiaoyuan2013@cqu.edu.cn)
英文摘要Thermoelectric materials are typically highly degenerate semiconductors, which require high carrier concentration. However, the efficiency of conventional doping by replacing host atoms with alien ones is restricted by solubility limit, and, more unfavorably, such a doping method is likely to cause strong charge-carrier scattering at ambient temperature, leading to deteriorated electrical performance. Here, an unconventional doping strategy is proposed, where a small trace of alien atoms is used to stabilize cation vacancies in Cu3SbSe4 by compositing with CuAlSe2, in which the cation vacancies rather than the alien atoms provide a high density of holes. Consequently, the hole concentration enlarges by six times but the carrier mobility is well maintained. As a result, a record-high average power factor of 19 mu W cm(-1) K-2 in the temperature range of 300-723 K is attained. Finally, with further reduced lattice thermal conductivity, a peak zT value of 1.4 and a record-high average zT value of 0.72 are achieved within the diamond-like compounds. This new doping strategy not only can be applied for boosting the average power factor for thermoelectrics, but more generally can be used to maintain carrier mobility for a variety of semiconductors that need high carrier concentration.
资助项目National Natural Science Foundation of China[51772035] ; National Natural Science Foundation of China[52071041] ; National Natural Science Foundation of China[11874356] ; National Natural Science Foundation of China[11904039] ; Project for Fundamental and Frontier Research in Chongqing[cstc2019jcyjjqX0002]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
出版者WILEY-V C H VERLAG GMBH
WOS记录号WOS:000758568100001
源URL[http://119.78.100.138/handle/2HOD01W0/15302]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Lu, Xu; Zhou, Xiaoyuan
作者单位1.Beijing Univ Technol, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100024, Peoples R China
2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
3.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
4.Chongqing Univ, Analyt & Testing Ctr, Chongqing 401331, Peoples R China
5.Chongqing Univ, Multiscale Porous Mat Ctr, Inst Adv Interdisciplinary Studies, Chongqing 401331, Peoples R China
6.Chongqing Univ, Sch Chem & Chem Engn, Chongqing 401331, Peoples R China
7.Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 401331, Peoples R China
8.Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China
推荐引用方式
GB/T 7714		 Huang, Yuling,Zhang, Bin,Li, Jingwei,et al. Unconventional Doping Effect Leads to Ultrahigh Average Thermoelectric Power Factor in Cu3SbSe4-Based Composites[J]. ADVANCED MATERIALS,2022:10.
APA Huang, Yuling.,Zhang, Bin.,Li, Jingwei.,Zhou, Zizhen.,Zheng, Sikang.,...&Zhou, Xiaoyuan.(2022).Unconventional Doping Effect Leads to Ultrahigh Average Thermoelectric Power Factor in Cu3SbSe4-Based Composites.ADVANCED MATERIALS,10.
MLA Huang, Yuling,et al."Unconventional Doping Effect Leads to Ultrahigh Average Thermoelectric Power Factor in Cu3SbSe4-Based Composites".ADVANCED MATERIALS (2022):10.

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来源：重庆绿色智能技术研究院

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