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Phase Modulation Enabled High Thermoelectric Performance in Polycrystalline GeSe0.75Te0.25

文献类型：期刊论文

作者Wang, Zhiran3,4; Wu, Hong1,5; Zhang, Bin6; Dai, Lu3,4; Huo, Yufeng3,4; Huang, Yuling1,5; Han, Guang2; Lu, Xu1,5; Zhou, Xiaoyuan1,5,6; Wang, Guoyu3,4
刊名ADVANCED FUNCTIONAL MATERIALS
出版日期2022-03-23
页码9
关键词thermoelectric Ge Se-4 Te-3 phase modulation figure of merit electronic band structure
ISSN号1616-301X
DOI10.1002/adfm.202111238
通讯作者Zhou, Xiaoyuan(xiaoyuan2013@cqu.edu.cn) ; Wang, Guoyu(guoyuw@cigit.ac.cn)
英文摘要The structure-property link is inherent to materials. Hexagonal Ge4Se3Te phase, with special Ge-Ge cationic bonding and distinctive from other IV-VI compounds, reveals thermoelectric (TE) performance far below the common values for IV-VI compounds. Here, it is shown that its TE performance can be substantially enhanced by phase modulation: increasing sintering temperature from 573 to 773 K leads to the decomposition of hexagonal phase into a composite of orthorhombic and rhombohedral phases, which significantly improves TE performance at T <= 550 K; Sb/Cd doping stabilizes the rhombohedral phase, compensates the hole concentration, and strengthens the phonon scattering, which further enhances the TE performance over the whole temperature range. The theoretical calculation reveals that the rhombohedral phase has a more favorable electronic band structure than the hexagonal phase for achieving higher electrical transport properties. The optimized TE performance is obtained in rhombohedral Ge0.90Sb0.08Cd0.02Se0.75Te0.25, with a zT(max) of 1.36 at 778 K and zT(ave) of 0.73 from 322 to 778 K, which are among the highest values in the Se-rich side of Ge(Se, Te) system, and one order higher than those in the hexagonal phase. The study sheds light on the validity of phase modulation for TE performance optimization in Ge(Se, Te)-based material systems.
资助项目National Natural Science Foundation of China[11874356] ; National Natural Science Foundation of China[51802034] ; National Natural Science Foundation of China[52071041] ; National Natural Science Foundation of China[51772035] ; Key Research Program of Frontier Sciences, CAS[QYZDB-SSW-SLH016] ; Project for Fundamental and Frontier Research in Chongqing[cstc2019jcyjjqX0002]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000771872300001
出版者WILEY-V C H VERLAG GMBH
源URL[http://119.78.100.138/handle/2HOD01W0/15344]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Zhou, Xiaoyuan; Wang, Guoyu
作者单位1.Chongqing Univ, Inst Adv Interdisciplinary Studies, Chongqing 401331, Peoples R China
2.Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China
3.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
4.Univ Chinese Acad Sci, Beijing 100044, Peoples R China
5.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
6.Chongqing Univ, Analyt & Testing Ctr, Chongqing 401331, Peoples R China
推荐引用方式
GB/T 7714		 Wang, Zhiran,Wu, Hong,Zhang, Bin,et al. Phase Modulation Enabled High Thermoelectric Performance in Polycrystalline GeSe0.75Te0.25[J]. ADVANCED FUNCTIONAL MATERIALS,2022:9.
APA Wang, Zhiran.,Wu, Hong.,Zhang, Bin.,Dai, Lu.,Huo, Yufeng.,...&Wang, Guoyu.(2022).Phase Modulation Enabled High Thermoelectric Performance in Polycrystalline GeSe0.75Te0.25.ADVANCED FUNCTIONAL MATERIALS,9.
MLA Wang, Zhiran,et al."Phase Modulation Enabled High Thermoelectric Performance in Polycrystalline GeSe0.75Te0.25".ADVANCED FUNCTIONAL MATERIALS (2022):9.

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来源：重庆绿色智能技术研究院

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