Origin of the enhanced edge optical transition in transition metal dichalcogenide flakes
文献类型:期刊论文
作者 | Huang, Pu2; Ma, Zhuang2; Wang, Gui2; Xiong, Wen1; Zhang, Peng2; Sun, Yiling2; Qian, Zhengfang2; Zhang, Xiuwen2 |
刊名 | JOURNAL OF MATERIALS CHEMISTRY C |
出版日期 | 2022-03-31 |
卷号 | 10期号:13页码:5303-5310 |
ISSN号 | 2050-7526 |
DOI | 10.1039/d2tc00078d |
通讯作者 | Zhang, Xiuwen(xiuwenzhang@szu.edu.cn) |
英文摘要 | Various edge configurations for transition metal dichalcogenide (TMD) flakes are inevitable during the material preparation. Such edge configurations with different local motifs play an important role in the optical transition. It is found in experiments that enhanced photoluminescence appears at the edge with a cation-terminated zigzag pattern but not at other edge configurations [Nat. Nanotechnol., 2020, 15, 29-34; Nano Lett., 2013, 13, 3447-3454]. We systematically studied the edge states of the feasible MoS2 flakes, and identified the edge modes at the S-passivated cation-terminated zigzag edge that endow strong optical transition. The identified edge states consist of the non-uniform edge mode of s-p-hybridized states within edge atoms, which can be preserved by the interior oxygens but destroyed by edge oxygens. The enhanced optical transition can be effectively tuned by in-plane and out-of-plane strains. Our study suggests the long-sought origin of the enhanced optical transition at the edge of TMD flakes, and provides a route to precisely manipulate the transition eigenstates for abundant functional edge structures with potential applications in transition-controlled electronic and optoelectronic devices. |
资助项目 | National Natural Science Foundation of China[11804230] ; National Natural Science Foundation of China[11774239] ; National Natural Science Foundation of China[61827815] ; Shenzhen Science and Technology Innovation Commission[KQTD20180412181422399] ; Shenzhen Science and Technology Innovation Commission[KQTD20170810105439418] ; Shenzhen Science and Technology Innovation Commission[JCYJ20180507181858539] ; Shenzhen Science and Technology Innovation Commission[ZDSYS201707271554071] ; High-Level University Construction Funds of SZU[860-000002081209] ; High-Level University Construction Funds of SZU[860-000002110711] |
WOS研究方向 | Materials Science ; Physics |
语种 | 英语 |
出版者 | ROYAL SOC CHEMISTRY |
WOS记录号 | WOS:000765897500001 |
源URL | [http://119.78.100.138/handle/2HOD01W0/15363] |
专题 | 中国科学院重庆绿色智能技术研究院 |
通讯作者 | Zhang, Xiuwen |
作者单位 | 1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 2.Shenzhen Univ, Coll Phys & Optoelect Engn, Minist Educ & Guangdong Prov, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China |
推荐引用方式 GB/T 7714 | Huang, Pu,Ma, Zhuang,Wang, Gui,et al. Origin of the enhanced edge optical transition in transition metal dichalcogenide flakes[J]. JOURNAL OF MATERIALS CHEMISTRY C,2022,10(13):5303-5310. |
APA | Huang, Pu.,Ma, Zhuang.,Wang, Gui.,Xiong, Wen.,Zhang, Peng.,...&Zhang, Xiuwen.(2022).Origin of the enhanced edge optical transition in transition metal dichalcogenide flakes.JOURNAL OF MATERIALS CHEMISTRY C,10(13),5303-5310. |
MLA | Huang, Pu,et al."Origin of the enhanced edge optical transition in transition metal dichalcogenide flakes".JOURNAL OF MATERIALS CHEMISTRY C 10.13(2022):5303-5310. |
入库方式: OAI收割
来源:重庆绿色智能技术研究院
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