High zero-bias responsivity induced by photogating effect in asymmetric device structure
文献类型：期刊论文
| 作者 | Gao, Kaicong1,3,4; Ran, Shuling2; Han, Qin1,4; Yang, Qi1,4; Jiang, Hao1,4 ; Fu, Jintao1,4; Leng, Chongqian1,4; Feng, Shuanglong1,4; Zhou, Dahua1,4; Li, Zhancheng1,4
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| 刊名 | OPTICAL MATERIALS
 |
| 出版日期 | 2022-02-01 |
| 卷号 | 124页码:7 |
| 关键词 | Graphene photodetector CdS thin films Asymmetric structure |
| ISSN号 | 0925-3467 |
| DOI | 10.1016/j.optmat.2022.112013 |
| 通讯作者 | Yu, Leyong(lyy@cigit.ac.cn) ; Shen, Jun(shenjun@cigit.ac.cn) |
| 英文摘要 | Graphene photodetectors based on photogating effect are promising due to the high photogain, but with the drawback of large dark current due to external bias. In this paper, we realized a graphene photodetector working at zero bias with high responsivity. By establishing asymmetric structure using CdS film on different part of graphene channel, the influence of asymmetric ratio on device performance were found to be opposite for external and zero bias. Without external bias, the responsivity can reach 0.26 A/W under visible light, resulting in a quantum efficiency of 51.5%, which is much larger than other zero-bias graphene photodetectors based on photothermoelectric effect. Furthermore, based on the asymmetric structure, infrared photoresponse beyond the CdS cut-off wavelength was observed at 980 nm wavelength at low temperature. This work provides a feasible scheme for the low energy consumption work of photodetectors with low dimensional materials. |
| 资助项目 | National Natural Science Foundation of China[61705229] ; National Natural Science Foundation of China[51902306] ; Youth Innovation Promotion Association of Chinese Academy of Sciences[2018416] ; Natural Science Foundation Project of Chongqing CSTC[cstc2019jcyj-xfkxX0006] ; Natural Science Foundation Project of Chongqing CSTC[cstc2021jcyj-msxmX0389] ; National Key R&D Program of China[2017YFE0131900] |
| WOS研究方向 | Materials Science ; Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000761895400003 |
| 出版者 | ELSEVIER |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/15398]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 通讯作者 | Yu, Leyong; Shen, Jun |
| 作者单位 | 1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 2.China Elect Technol Grp Corp, Inst 24, Chongqing 400060, Peoples R China 3.Chongqing Univ Posts & Telecommun, Coll Optoelect Engn, Chongqing 400065, Peoples R China 4.Univ China Acad Sci, Chongqing Sch, Chongqing 400714, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, Kaicong,Ran, Shuling,Han, Qin,et al. High zero-bias responsivity induced by photogating effect in asymmetric device structure[J]. OPTICAL MATERIALS,2022,124:7. |
| APA | Gao, Kaicong.,Ran, Shuling.,Han, Qin.,Yang, Qi.,Jiang, Hao.,...&Shen, Jun.(2022).High zero-bias responsivity induced by photogating effect in asymmetric device structure.OPTICAL MATERIALS,124,7. |
| MLA | Gao, Kaicong,et al."High zero-bias responsivity induced by photogating effect in asymmetric device structure".OPTICAL MATERIALS 124(2022):7. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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