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Multiferroicity and giant in-plane negative Poisson's ratio in wurtzite monolayers

文献类型：期刊论文

作者Ma, Zhuang3; Huang, Pu3; Li, Jin3; Zhang, Peng3; Zheng, Jiaxin1; Xiong, Wen4; Wang, Fei2; Zhang, Xiuwen3
刊名NPJ COMPUTATIONAL MATERIALS
出版日期2022-03-28
卷号8期号:1页码:11
DOI10.1038/s41524-022-00740-8
通讯作者Huang, Pu(arvin_huang@szu.edu.cn)
英文摘要Monolayers of layered materials, such as graphite and molybdenum dichalcogenides, have been the focus of materials science in the last decades. Here, we reveal benign stability and intriguing physical properties in the thinnest monolayer wurtzite (wz) semiconductors, which can be exfoliated from their bulk and stacked to reform the wz crystals. The candidate ZnX and CdX (X = S, Se, Te) monolayers possess low cleavage energy and direct bandgaps, which harbor strongly coupled ferroelectricity and ferroelasticity with low transition barriers, giant in-plane negative Poisson's ratio, as well as giant Rashba spin splitting, enabling the co-tunability of spin splitting and auxetic magnitudes via multiferroic switching. These wz monolayers can be used as building blocks of devices structures, due to their inherent "self-healable" capacity, which offer more flexibility for semiconductor fabrication and provide a natural platform to probe the interplay of multiple physical effects, bringing light into the rich physics in tetrahedral semiconductors.
资助项目National Natural Science Foundation of China[11804230] ; National Natural Science Foundation of China[11774239] ; National Natural Science Foundation of China[61827815] ; Shenzhen Science and Technology Innovation Commission[KQTD20170810105439418] ; Shenzhen Science and Technology Innovation Commission[KQTD20180412181422399] ; Shenzhen Science and Technology Innovation Commission[JCYJ20180507181858539] ; Shenzhen Science and Technology Innovation Commission[ZDSYS201707271554071] ; High-Level University Construction Funds of SZU[860-000002081209] ; High-Level University Construction Funds of SZU[860-000002110711]
WOS研究方向Chemistry ; Materials Science
语种英语
WOS记录号WOS:000773924600001
出版者NATURE PORTFOLIO
源URL[http://119.78.100.138/handle/2HOD01W0/15475]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Huang, Pu
作者单位1.Peking Univ, Sch Adv Mat, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
2.Zhengzhou Univ, Sch Phys & Microelect, Zhengzhou 450001, Peoples R China
3.Shenzhen Univ, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov, Coll Phys & Optoelect Engn, Shenzhen 518060, Peoples R China
4.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
推荐引用方式
GB/T 7714		 Ma, Zhuang,Huang, Pu,Li, Jin,et al. Multiferroicity and giant in-plane negative Poisson's ratio in wurtzite monolayers[J]. NPJ COMPUTATIONAL MATERIALS,2022,8(1):11.
APA Ma, Zhuang.,Huang, Pu.,Li, Jin.,Zhang, Peng.,Zheng, Jiaxin.,...&Zhang, Xiuwen.(2022).Multiferroicity and giant in-plane negative Poisson's ratio in wurtzite monolayers.NPJ COMPUTATIONAL MATERIALS,8(1),11.
MLA Ma, Zhuang,et al."Multiferroicity and giant in-plane negative Poisson's ratio in wurtzite monolayers".NPJ COMPUTATIONAL MATERIALS 8.1(2022):11.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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