中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Single-crystal two-dimensional material epitaxy on tailored non-single-crystal substrates

文献类型:期刊论文

作者Li, Xin3,4; Wu, Guilin5,6; Zhang, Leining8,9; Huang, Deping3; Li, Yunqing3,4; Zhang, Ruiqi3,4; Li, Meng13; Zhu, Lin13; Guo, Jing5; Huang, Tianlin5
刊名NATURE COMMUNICATIONS
出版日期2022-04-01
卷号13期号:1页码:8
DOI10.1038/s41467-022-29451-w
通讯作者Huang, Xiaoxu(xiaoxuhuang@cqu.edu.cn) ; Ding, Feng(f.ding@unist.ac.kr) ; Shi, Haofei(shi@cigit.ac.cn)
英文摘要The use of single-crystal substrates as templates for the epitaxial growth of single-crystal overlayers has been a primary principle of materials epitaxy for more than 70 years. Here we report our finding that, though counterintuitive, single-crystal 2D materials can be epitaxially grown on twinned crystals. By establishing a geometric principle to describe 2D materials alignment on high-index surfaces, we show that 2D material islands grown on the two sides of a twin boundary can be well aligned. To validate this prediction, wafer-scale Cu foils with abundant twin boundaries were synthesized, and on the surfaces of these polycrystalline Cu foils, we have successfully grown wafer-scale single-crystal graphene and hexagonal boron nitride films. In addition, to greatly increasing the availability of large area high-quality 2D single crystals, our discovery also extends the fundamental understanding of materials epitaxy. The heteroepitaxial growth of crystalline 2D materials is usually based on single-crystal substrates. Here, the authors demonstrate that single-crystal graphene and hexagonal boron nitride films can be successfully grown on wafer-scale copper foils with tailored twin boundaries.
资助项目national natural science foundation of China[51702315] ; national natural science foundation of China[51471039] ; national natural science foundation of China[51421001] ; national natural science foundation of China[51902306] ; national natural science foundation of China[5071038] ; State Key Research and Development Program of China[2016YFB0700403] ; State Key Research and Development Program of China[2017YFE0131900] ; National Major Scientific Research Instrument Development Project of China AQ25 Scheme[A04-11227802] ; Institute for Basic Science of South Korea[IBS-R019-D1] ; Hong Kong Research Grants Council[600113] ; Science and Technology Service Network Initiative of Chinese Academy of Sciences
WOS研究方向Science & Technology - Other Topics
语种英语
出版者NATURE PORTFOLIO
WOS记录号WOS:000777408600013
源URL[http://119.78.100.138/handle/2HOD01W0/15497]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Huang, Xiaoxu; Ding, Feng; Shi, Haofei
作者单位1.Chongqing Key Lab Graphene Film Mfg, Chongqing 401329, Peoples R China
2.Hong Kong Univ Sci & Technol HKUST, Dept Phys, Kowloon, Clear Water Bay, Hong Kong, Peoples R China
3.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China
4.Univ Chinese Acad Sci, 19 A Yuquan Rd, Beijing 100049, Peoples R China
5.Chongqing Univ, Coll Mat Sci & Engn, Int Joint Lab Light Alloys MOE, Chongqing 400044, Peoples R China
6.Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Beijing 100083, Peoples R China
7.Ulsan Natl Inst Sci & Technol UNIST, Sch Mat Sci & Engn, Ulsan 44919, South Korea
8.Inst Basic Sci IBS, Ctr Multidimens Carbon Mat CMCM, Ulsan 44919, South Korea
9.Ulsan Natl Inst Sci & Technol UNIST, Dept Mat Sci & Engn, Ulsan 44919, South Korea
10.Chongqing Univ, Shenyang Natl Lab Mat Sci, Chongqing 400044, Peoples R China
推荐引用方式
GB/T 7714
Li, Xin,Wu, Guilin,Zhang, Leining,et al. Single-crystal two-dimensional material epitaxy on tailored non-single-crystal substrates[J]. NATURE COMMUNICATIONS,2022,13(1):8.
APA Li, Xin.,Wu, Guilin.,Zhang, Leining.,Huang, Deping.,Li, Yunqing.,...&Tang, Wenxin.(2022).Single-crystal two-dimensional material epitaxy on tailored non-single-crystal substrates.NATURE COMMUNICATIONS,13(1),8.
MLA Li, Xin,et al."Single-crystal two-dimensional material epitaxy on tailored non-single-crystal substrates".NATURE COMMUNICATIONS 13.1(2022):8.

入库方式: OAI收割

来源:重庆绿色智能技术研究院

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