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Enhanced Photogating Effect in Graphene Photodetectors via Potential Fluctuation Engineering

文献类型：期刊论文

作者Jiang, Hao1,2; Wei, Jingxuan1; Sun, Feiying3; Nie, Changbin3; Fu, Jintao1; Shi, Haofei3; Sun, Jiuxun2; Wei, Xingzhan3; Qiu, Cheng-Wei1
刊名ACS NANO
出版日期2022-03-22
卷号16期号:3页码:4458-4466
关键词photogating effect graphene infrared photodetector potential fluctuation engineering silicon grating
ISSN号1936-0851
DOI10.1021/acsnano.1c10795
通讯作者Sun, Jiuxun(sjx@uestc.edu.cn) ; Wei, Xingzhan(weixingzhan@cigit.ac.cn) ; Qiu, Cheng-Wei(chengwei.qiu@nus.edu.sg)
英文摘要The photogating effect in hybrid structures has manifested itself as a reliable and promising approach for photodetectors with ultrahigh responsivity. A crucial factor of the photogating effect is the built-in potential at the interface, which controls the separation and harvesting of photogenerated carriers. So far, the primary efforts of designing the built-in potential rely on discovering different materials and developing multilayer structures, which may raise problems in the compatibility with the standard semiconductor production line. Here, we report an enhanced photogating effect in a monolayer graphene photodetector based on a structured substrate, where the built-in potential is established by the mechanism of potential fluctuation engineering. We find that the enhancement factor of device responsivity is related to a newly defined parameter, namely, fluctuation period rate (P-f). Compared to the device without a nanostructured substrate, the responsivity of the device with an optimized P-f is enhanced by 100 times, reaching a responsivity of 240 A/W and a specific detectivity, D*, of 3.4 x 10(12) Jones at 1550 nm wavelength and room temperature. Our experimental results are supported by both theoretical analysis and numerical simulation. Since our demonstration of the graphene photodetectors leverages the engineering of structures with monolayer graphene rather than materials with a multilayer complex structure. it should be universal and applicable to other hybrid photodetectors.
资助项目National Key RAMP;D Program of China[2017YFE0131900] ; Natural Science Foundation of Chongqing, China[cstc2019jcyjjqX0017] ; Chongqing Talents Innovation and Entrepreneur Leaders Project[CQYC201903020] ; National Natural Science Foundation of China (NSFC)[62005182] ; National Research Foundation, Prime Minister's Office, Singapore[NRF-CRP22-2019-0006] ; AME Individual Research Grant (IRG) - A*STAR, Singapore[A2083c0060]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
语种英语
WOS记录号WOS:000780214300088
出版者AMER CHEMICAL SOC
源URL[http://119.78.100.138/handle/2HOD01W0/15563]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Sun, Jiuxun; Wei, Xingzhan; Qiu, Cheng-Wei
作者单位1.Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117583, Singapore
2.Univ Elect Sci & Technol China, Sch Phys, Chengdu 610054, Peoples R China
3.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
推荐引用方式
GB/T 7714		 Jiang, Hao,Wei, Jingxuan,Sun, Feiying,et al. Enhanced Photogating Effect in Graphene Photodetectors via Potential Fluctuation Engineering[J]. ACS NANO,2022,16(3):4458-4466.
APA Jiang, Hao.,Wei, Jingxuan.,Sun, Feiying.,Nie, Changbin.,Fu, Jintao.,...&Qiu, Cheng-Wei.(2022).Enhanced Photogating Effect in Graphene Photodetectors via Potential Fluctuation Engineering.ACS NANO,16(3),4458-4466.
MLA Jiang, Hao,et al."Enhanced Photogating Effect in Graphene Photodetectors via Potential Fluctuation Engineering".ACS NANO 16.3(2022):4458-4466.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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