中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 重庆绿色智能技术研究院
  3. 中国科学院重庆绿色智能技术研究院
Preparation and photoelectric characterization of p-GeSe/p-WS2 heterojunction devices

文献类型：期刊论文

作者Yan, Bing1,2; Zhang, Guoxin1,2; Ning, Bo1,3; Chen, Sikai1,3; Zhao, Yang1,3; Zhou, Dahua1; Shi, Xuan1; Shen, Jun1; Xiao, Zeyun1; Zhao, Hongquan1
刊名JOURNAL OF PHYSICS D-APPLIED PHYSICS
出版日期2022-08-11
卷号55期号:32页码:9
ISSN号0022-3727
关键词van der Waals heterojunction p-p type junction GeSe/WS2 optoelectronic properties
DOI10.1088/1361-6463/ac6711
通讯作者Shi, Xuan(shixuan@cigit.ac.cn) ; Zhao, Hongquan(hqzhao@cigit.ac.cn)
英文摘要The construction of van der Waals (vdW) heterojunctions has attracted widespread attention for various strategies in the optoelectronic field due to their band structural advantages. Herein, novel p-p heterojunctions based on p-GeSe and p-WS2 flakes are fabricated on 300 nm-SiO2/Si substrates by means of mechanical exfoliation and micro-area fixed-point transfer of the GeSe flakes onto the WS2 flakes. The thickness and quality of the materials are determined by atomic force microscope and Raman spectroscopy. Considerable photoelectric characteristics are exhibited by exploring the performance of the heterojunctions under a 635 nm laser illumination. The photoresponsivity (R-lambda), specific detectivity (D*), and external quantum efficiency (EQE) of the heterojunctions are measured to be 195.70 mA W-1, 2.879 x 10(7) Jones, and 38.28%, respectively. The results indicate the strong potential of the p-p type heterojunctions composed of GeSe and WS2 flakes in photoelectric devices, and our work provides parameters and technical support for the development of vdW heterojunction devices.
资助项目National Science Foundation of China[61775214] ; National Science Foundation of China[61601433] ; Natural Science Foundation of Chongqing, China[cstc2019jcyj-zdxmX0003] ; Natural Science Foundation of Chongqing, China[cstc2019jcyj-msxmX0387] ; Project of Chongqing Talents[CQYC202002064] ; Youth Innovation Promotion Association CAS
WOS研究方向Physics
语种英语
出版者IOP Publishing Ltd
WOS记录号WOS:000799595400001
源URL[http://119.78.100.138/handle/2HOD01W0/15891]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Shi, Xuan; Zhao, Hongquan
作者单位1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
2.Univ Chinese Acad Sci, Chongqing Sch, Chongqing 400714, Peoples R China
3.Chongqing Univ Posts & Telecommun, Coll Optoelect Engn, Chongqing 400065, Peoples R China
推荐引用方式
GB/T 7714		 Yan, Bing,Zhang, Guoxin,Ning, Bo,et al. Preparation and photoelectric characterization of p-GeSe/p-WS2 heterojunction devices[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2022,55(32):9.
APA Yan, Bing.,Zhang, Guoxin.,Ning, Bo.,Chen, Sikai.,Zhao, Yang.,...&Zhao, Hongquan.(2022).Preparation and photoelectric characterization of p-GeSe/p-WS2 heterojunction devices.JOURNAL OF PHYSICS D-APPLIED PHYSICS,55(32),9.
MLA Yan, Bing,et al."Preparation and photoelectric characterization of p-GeSe/p-WS2 heterojunction devices".JOURNAL OF PHYSICS D-APPLIED PHYSICS 55.32(2022):9.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。