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Tungsten Disulfide Nanosheet-Based Field-Effect Transistor Biosensor for DNA Hybridization Detection

文献类型：期刊论文

作者Bahri, Mohamed1,2,3; Shi, Biao1,2; Elaguech, Mohamed Amin1,2,3; Djebbi, Khouloud1,2,3; Zhou, Daming1,2; Liang, Liyuan1,2; Tlili, Chaker1,2; Wang, Deqiang1,2,3
刊名ACS APPLIED NANO MATERIALS
出版日期2022-04-22
卷号5期号:4页码:5035-5044
关键词tungsten disulfide CVD DNA detection field-effect transistor biosensor polymer-assisted transfer
DOI10.1021/acsanm.2c00067
通讯作者Tlili, Chaker(chakertlili@cigit.ac.cn) ; Wang, Deqiang(dqwang@cigit.ac.cn)
英文摘要Transition-metal dichalcogenides (TMDs), including molybdenum disulfide (MoS2) and tungsten disulfide (WS2), with appealing properties have recently become promising alternatives to graphene with semimetal and low on/off current ratio properties as the sensing channel in field-effect transistor (FET) biosensors. However, the efficiency of DNA-based FET devices strongly depends on how DNA probes are tethered to the nanomaterial channels. As against covalent attachment, simple DNA physisorption has become increasingly popular, and a DNA sequence with strong affinity for nanomaterials is still highly sought after. Recently, poly-cytosine (poly-C) DNA was found to be strongly adsorbed to many common nanomaterials, including WS2. Herein, a diblock DNA probe containing a (poly-C) (C15) was used to attach to a chemical vapor deposition (CVD)-grown monolayer WS2 surface; meanwhile, the target complementary DNA (cDNA) was hybridized to the other block of the DNA probe. The biosensor developed following this strategy led to a limit of detection down to 3 aM within a concentration range spanning over approximately 7 orders of magnitude (10(-16) to 10(-9) M), which was lower than those of the previously reported TMDs and a good competitor to graphene FET DNA biosensors. Moreover, the proposed WS2 FET DNA biosensor showed high specificity capable of distinguishing the cDNA from non-cDNA, one-base mismatched DNA, two-base mismatched DNA, and three-base mismatched DNA, making our strategy an exciting avenue for disease diagnosis. The authors are convinced that this work extends the CVD synthesis of WS2 and its promise in biosensing application-based FETs.
资助项目Chongqing Key Lab of Multi-Scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, China ; Excellent Youth Foundation of Chongqing Scientific Committee[cstc2021jcyj-jqX0030] ; West Light Foundation of the Chinese Academy of Sciences ; Natural Science Foundation of Beibei, Chongqing, China[E1316101] ; National Natural Science Foundation of China[31800711] ; Natural Science Foundation of Chongqing, China[cstc2020jcyj-msxmX1007] ; Natural Science Foundation of Chongqing, China[cstc2018jcyjAX0304] ; Natural Science Foundation of Chongqing, China[cstc2018jcyjAX0308] ; Chongqing Talents[CQYC201905007] ; University of Chinese Academy of Sciences (UCAS), Beijing, China
WOS研究方向Science & Technology - Other Topics ; Materials Science
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000813134100001
源URL[http://119.78.100.138/handle/2HOD01W0/15940]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Tlili, Chaker; Wang, Deqiang
作者单位1.Univ Chinese Acad Sci, Chongqing Sch, Chongqing 400714, Peoples R China
2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714		 Bahri, Mohamed,Shi, Biao,Elaguech, Mohamed Amin,et al. Tungsten Disulfide Nanosheet-Based Field-Effect Transistor Biosensor for DNA Hybridization Detection[J]. ACS APPLIED NANO MATERIALS,2022,5(4):5035-5044.
APA Bahri, Mohamed.,Shi, Biao.,Elaguech, Mohamed Amin.,Djebbi, Khouloud.,Zhou, Daming.,...&Wang, Deqiang.(2022).Tungsten Disulfide Nanosheet-Based Field-Effect Transistor Biosensor for DNA Hybridization Detection.ACS APPLIED NANO MATERIALS,5(4),5035-5044.
MLA Bahri, Mohamed,et al."Tungsten Disulfide Nanosheet-Based Field-Effect Transistor Biosensor for DNA Hybridization Detection".ACS APPLIED NANO MATERIALS 5.4(2022):5035-5044.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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