中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
In-Situ Growth of High-Quality Customized Monolayer Graphene Structures for Optoelectronics

文献类型:期刊论文

作者Zhang, Ruiqi1,2; Fu, Jintao1,2; Wang, Huawen1,2; Wei, Xingzhan1,2; Li, Xin1,2; Shi, Haofei1,2
刊名ADVANCED FUNCTIONAL MATERIALS
出版日期2022-05-26
页码9
关键词customized patterns in-situ growth monolayer graphene optoelectronics
ISSN号1616-301X
DOI10.1002/adfm.202202376
通讯作者Li, Xin(lixin@cigit.ac.cn) ; Shi, Haofei(shi@cigit.ac.cn)
英文摘要High-quality customized monolayer graphene structures are a prerequisite for various applications such as electronics, optoelectronics, and energy devices. Top-down photolithography is the main method for graphene patterning, but it is greatly affected by complex manufacturing processes and residual photoresist. Recently, bottom-up methods based on catalyst or precursor patterning have been developed. Although these methods can achieve high-resolution graphene patterns, it is difficult to control the number of graphene layers and has a high defect density. Here, the authors propose a selective area reconstruction method for in-situ growth of high-quality monolayer graphene structures on copper substrates. The method utilizes selective oxidation and high-temperature reduction technologies, which can effectively regulate the surface characteristics of the copper substrate, thereby precisely controlling the nucleation and growth behavior of the customized graphene structure. The feature size of the fabricated graphene structure is less than 1 mu m and it has high monolayer coverage and extremely low defect density. The performance of the photoluminescence device and photodetector based on the customized monolayer graphene structure is characterized. The method provides a new approach for the direct growth of high-quality, scalable, and high-precision functional graphene structures, which is expected to have great potential in the optoelectronic applications.
资助项目National Natural Science Foundation of China[51702315] ; National Natural Science Foundation of China[51902306] ; Natural Science Foundation of Chongqing of China[cstc2018jcyjAX0377] ; Science and Technology Service Network Initiative of Chinese Academy of Sciences, State Key Research and Development Program of China[2017YFE0131900]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000803130100001
出版者WILEY-V C H VERLAG GMBH
源URL[http://119.78.100.138/handle/2HOD01W0/16257]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Li, Xin; Shi, Haofei
作者单位1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China
2.Univ Chinese Acad Sci, Chongqing Sch, Chongqing 400714, Peoples R China
推荐引用方式
GB/T 7714
Zhang, Ruiqi,Fu, Jintao,Wang, Huawen,et al. In-Situ Growth of High-Quality Customized Monolayer Graphene Structures for Optoelectronics[J]. ADVANCED FUNCTIONAL MATERIALS,2022:9.
APA Zhang, Ruiqi,Fu, Jintao,Wang, Huawen,Wei, Xingzhan,Li, Xin,&Shi, Haofei.(2022).In-Situ Growth of High-Quality Customized Monolayer Graphene Structures for Optoelectronics.ADVANCED FUNCTIONAL MATERIALS,9.
MLA Zhang, Ruiqi,et al."In-Situ Growth of High-Quality Customized Monolayer Graphene Structures for Optoelectronics".ADVANCED FUNCTIONAL MATERIALS (2022):9.

入库方式: OAI收割

来源:重庆绿色智能技术研究院

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