中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Graphene Growth across the Twin Boundaries of Copper Substrate

文献类型:期刊论文

作者Huang, Deping1,2,3; Duan, Yinwu4,5; Zhang, Leining6,7; li, Xin2; Zhang, Yongna1,2,3; Ding, Feng6,7; Guo, Jing8; Huang, Xiaoxu8; Li, Zhancheng2; Shi, Haofei2
刊名ADVANCED FUNCTIONAL MATERIALS
出版日期2022-05-31
页码9
关键词dopants graphene islands strains twin boundaries
ISSN号1616-301X
DOI10.1002/adfm.202202415
通讯作者Li, Zhancheng(lizc@cigit.ac.cn) ; Shi, Haofei(shi@cigit.ac.cn)
英文摘要Twin crystals, the formation energy of which is much smaller than that of ordinary grain boundaries, widely exist in the annealed copper and are hard to eliminate. The study of the effects of twin boundaries on graphene growth is of great significance to the understanding of graphene epitaxy. However, there are few studies on the effects of twin boundaries on the graphene growth process. Here, this article experimentally demonstrates that graphene islands are subjected to different compressive strains from the opposite copper crystal plane after growing across the twin boundary. Further results reveal that graphene can grow across different twin boundaries, such as atom steps, narrow valleys, and even micron-scale ridges, without forming linear defect. Therefore, strain-induced graphene doping can be manipulated with the type of twin boundaries and the location on the twin crystals. The transition region where the degree of doping changes monotonically across the twin boundary further confirms the different spatial doping phenomena of graphene islands. This work provides a new perspective for understanding the effect of twin boundaries on the graphene epitaxy, which is expected to have a potential impact on growing high-quality graphene on twinned copper substrates.
资助项目NSFC[51902306] ; NSFC[51402291] ; NSFC[51702315] ; Natural Science Pioneer Science Foundation of Chongqing of China[Cstc2019jcyj- xfkxX0006] ; West Light Foundation for Talent Cultivation of The Chinese Academy of Sciences ; Natural Science Foundation of Chongqing of China[cstc2018jcyjAX0377]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000803749800001
出版者WILEY-V C H VERLAG GMBH
源URL[http://119.78.100.138/handle/2HOD01W0/16278]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Li, Zhancheng; Shi, Haofei
作者单位1.Chongqing Univ, Chongqing 400044, Peoples R China
2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
3.Univ Chinese Acad Sci, Chongqing Sch, Chongqing 400714, Peoples R China
4.Chongqing Engn Res Ctr Graphene Film Mfg, Chongqing 401329, Peoples R China
5.Chongqing Graphene Technol Innovat Ctr, Chongqing 401329, Peoples R China
6.Inst Basic Sci IBS, Ctr Multidimens Carbon Mat CMCM, Ulsan 44919, South Korea
7.Ulsan Natl Inst Sci & Technol UNIST, Dept Mat Sci & Engn, Ulsan 44919, South Korea
8.Chongqing Univ, Coll Mat Sci & Engn, Int Joint Lab Light Alloys MOE, Chongqing 400044, Peoples R China
推荐引用方式
GB/T 7714
Huang, Deping,Duan, Yinwu,Zhang, Leining,et al. Graphene Growth across the Twin Boundaries of Copper Substrate[J]. ADVANCED FUNCTIONAL MATERIALS,2022:9.
APA Huang, Deping.,Duan, Yinwu.,Zhang, Leining.,li, Xin.,Zhang, Yongna.,...&Shi, Haofei.(2022).Graphene Growth across the Twin Boundaries of Copper Substrate.ADVANCED FUNCTIONAL MATERIALS,9.
MLA Huang, Deping,et al."Graphene Growth across the Twin Boundaries of Copper Substrate".ADVANCED FUNCTIONAL MATERIALS (2022):9.

入库方式: OAI收割

来源:重庆绿色智能技术研究院

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