Mid-Infrared Graphene/Silicon-Based Electro-Optic Phase Modulator
文献类型：预印本
| 作者 | Ban, Xiaoqiang2,3,4; Dong, Bo4; Chen, Zongyu4; Huang, Wobin4; Zhong, Ming1; Little, Brent E.2,3 |
| 英文摘要 | Electro-optic modulator plays an important role in optical signal processing. We demonstrated a low loss graphene/silicon-waveguide-based electro-optic phase modulator. The results demonstrate that the modulation efficiency increases when increasing the graphene layer and modulating length in mid-infrared region. Its 3 dB bandwidth (41.2 GHz) does not depend on the graphene modulating length. The two-layer graphene/silicon waveguide modulator can reach π phase shift with minimum insertion loss (0.05 dB) when the modulation length is 400 μm. This work is useful for designing a high-performance phase modulator. © 2022, The Authors. All rights reserved. |
| 出处 | SSRN |
| 出版者 | SSRN |
| ISSN号 | 15565068 |
| 发表日期 | 2022-07-25 |
| 语种 | 英语 |
| 产权排序 | 1 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/96081]  |
| 专题 | 西安光学精密机械研究所_瞬态光学技术国家重点实验室 |
| 作者单位 | 1.School of Mathematics and Statistics, Shaanxi Normal University, Xi’an; 710119, China 2.University of Chinese Academy of Sciences, Beijing; 100049, China; 3.State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'An; 710119, China; 4.College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen; 518118, China; |
| 推荐引用方式 GB/T 7714 | Ban, Xiaoqiang,Dong, Bo,Chen, Zongyu,et al. Mid-Infrared Graphene/Silicon-Based Electro-Optic Phase Modulator. 2022. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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