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A photon-controlled diode with a new signal-processing behavior

文献类型：期刊论文

作者Feng, Shun3,4; Han, Ruyue2,4; Zhang, Lili4; Liu, Chi2,4; Li, Bo2,4; Zhu, Honglei2,4; Zhu, Qianbing2,4; Chen, Wei2,4; Cheng, Hui-Ming1,2,4; Sun, Dong-Ming2,4
刊名NATIONAL SCIENCE REVIEW
出版日期2022-08-17
卷号9期号:8页码:8
ISSN号2095-5138
关键词photon-controlled diode fully-off rectifying photomemory array
DOI10.1093/nsr/nwac088
通讯作者Liu, Chi(chiliu@imr.ac.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn) ; Sun, Dong-Ming(dmsun@imr.ac.cn)
英文摘要The photodetector is a key component in optoelectronic integrated circuits. Although there are various device structures and mechanisms, the output current changes either from rectified to fully-on or from fully-off to fully-on after illumination. A device that changes the output current from fully-off to rectified should be possible. We report the first photon-controlled diode based on a n/n(-) molybdenum disulfide junction. Schottky junctions formed at the cathode and anode either prevent or allow the device to be rectifying, so that the output current of the device changes from fully-off to rectified. By increasing the thickness of the photogating layer, the behavior of the device changes from a photodetector to a multifunctional photomemory with the highest non-volatile responsivity of 4.8 x 10(7) A/W and the longest retention time of 6.5 x 10(6) s reported so far. Furthermore, a 3 x 3 photomemory array without selectors shows no crosstalk between adjacent devices and has optical signal-processing functions including wavelength and power-density selectivity. Photon-controlled diodes, as a new circuit element proposed for the first time, change the output current from a fully-off state to a rectified state after illumination, which paves the way for future highly integrated, low-power, intelligent optoelectronic systems.
资助项目Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; National Key Research and Development Program of China[2021YFA1200013] ; Shandong Natural Science Foundation of China[ZR2019ZD49] ; National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[61704175] ; National Natural Science Foundation of China[62125406] ; National Natural Science Foundation of China[52188101] ; Chinese Academy of Sciences[SYNL2020] ; Chinese Academy of Sciences[SKLA-2019-03]
WOS研究方向Science & Technology - Other Topics
语种英语
出版者OXFORD UNIV PRESS
WOS记录号WOS:000841533900007
资助机构Strategic Priority Research Program of Chinese Academy of Sciences ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; National Key Research and Development Program of China ; Shandong Natural Science Foundation of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences
源URL[http://ir.imr.ac.cn/handle/321006/174515]  
专题金属研究所_中国科学院金属研究所
通讯作者Liu, Chi; Cheng, Hui-Ming; Sun, Dong-Ming
作者单位1.Chinese Acad Sci, Fac Mat Sci & Engn, Inst Technol Carbon Neutral, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式
GB/T 7714		 Feng, Shun,Han, Ruyue,Zhang, Lili,et al. A photon-controlled diode with a new signal-processing behavior[J]. NATIONAL SCIENCE REVIEW,2022,9(8):8.
APA Feng, Shun.,Han, Ruyue.,Zhang, Lili.,Liu, Chi.,Li, Bo.,...&Sun, Dong-Ming.(2022).A photon-controlled diode with a new signal-processing behavior.NATIONAL SCIENCE REVIEW,9(8),8.
MLA Feng, Shun,et al."A photon-controlled diode with a new signal-processing behavior".NATIONAL SCIENCE REVIEW 9.8(2022):8.

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来源：金属研究所

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