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Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory

文献类型：期刊论文

作者Zhang, Rongjie3,4; Lai, Yongjue3,4; Chen, Wenjun3,4; Teng, Changjiu3,4; Sun, Yujie3,4; Yang, Liusi3,4; Wang, Jingyun3,4; Liu, Bilu3,4; Cheng, Hui-Ming1,2,3,4
刊名ACS NANO
出版日期2022-04-26
卷号16期号:4页码:6309-6316
ISSN号1936-0851
关键词  2D materials monolayer MoS 2 wrinkles memory carrier trapping conductive AFM
DOI10.1021/acsnano.2c00350
通讯作者Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
英文摘要Atomically thin two-dimensional (2D) semiconductors are promising for next-generation memory to meet the scaling down of semiconductor industry. However, the controllability of carrier trapping status, which is the key figure of merit for memory devices, still halts the application of 2D semiconductor-based memory. Here, we introduce a scheme for 2D material based memory using wrinkles in monolayer 2D semiconductors as controllable carrier trapping centers. Memory devices based on wrinkled monolayer MoS2 show multilevel storage capability, an on/off ratio of 106, and a retention time of >104 s, as well as tunable linear and exponential behaviors at the stimulation of different gate voltages. We also reveal an interesting wrinkle-based carrier trapping mechanism by using conductive atomic force microscopy. This work offers a configuration to control carriers in ultrathin memory devices and for in-memory calculations.
资助项目National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[52188101] ; National Science Fund for Distinguished Young Scholars[52125309] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen[201901171523] ; Shenzhen Basic Research Program[JCYJ20200109144616617]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000813154800001
资助机构National Natural Science Foundation of China ; National Science Fund for Distinguished Young Scholars ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen ; Shenzhen Basic Research Program
源URL[http://ir.imr.ac.cn/handle/321006/174702]  
专题金属研究所_中国科学院金属研究所
通讯作者Liu, Bilu; Cheng, Hui-Ming
作者单位1.Chinese Acad Sci, Fac Mat & Engn, Shenzhen Inst Adv Technol, Inst Technol Carbon Neutral, Shenzhen 518055, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
3.Tsinghua Univ, Inst Mat Res, Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China
4.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Shenzhen Int Grad Sch, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China
推荐引用方式
GB/T 7714		 Zhang, Rongjie,Lai, Yongjue,Chen, Wenjun,et al. Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory[J]. ACS NANO,2022,16(4):6309-6316.
APA Zhang, Rongjie.,Lai, Yongjue.,Chen, Wenjun.,Teng, Changjiu.,Sun, Yujie.,...&Cheng, Hui-Ming.(2022).Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory.ACS NANO,16(4),6309-6316.
MLA Zhang, Rongjie,et al."Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory".ACS NANO 16.4(2022):6309-6316.

入库方式： OAI收割

来源：金属研究所

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