Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes
文献类型：期刊论文
| 作者 | Yao, Weizhen; Wang, Lianshan; Meng, Yulin; Yang, Shaoyan; Liu, Xianglin; Niu, Huidan; Wang, Zhanguo |
| 刊名 | CRYSTENGCOMM
 |
| 出版日期 | 2021 |
| 卷号 | 23期号:12页码:2360–2366 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31337]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Yao, Weizhen; Wang, Lianshan; Meng, Yulin; Yang, Shaoyan; Liu, Xianglin; Niu, Huidan; Wang, Zhanguo. Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes[J]. CRYSTENGCOMM,2021,23(12):2360–2366. |
| APA | Yao, Weizhen; Wang, Lianshan; Meng, Yulin; Yang, Shaoyan; Liu, Xianglin; Niu, Huidan; Wang, Zhanguo.(2021).Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes.CRYSTENGCOMM,23(12),2360–2366. |
| MLA | Yao, Weizhen; Wang, Lianshan; Meng, Yulin; Yang, Shaoyan; Liu, Xianglin; Niu, Huidan; Wang, Zhanguo."Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes".CRYSTENGCOMM 23.12(2021):2360–2366. |
入库方式： OAI收割
来源：半导体研究所
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