Reducing the reverse leakage current of AlGaN/GaN heterostructures via low-fluence neutron irradiation
文献类型：期刊论文
| 作者 | Wang, Rong; Xu, Jianxing; Zhang, Shiyong; Zhang, Ying; Zheng, Penghui; Cheng, Zhe; Zhang, Lian; Chen, Feng-Xiang; Tong, Xiaodong; Zhang, Yun; Tan, Wei |
| 刊名 | JOURNAL OF MATERIALS CHEMISTRY C
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| 出版日期 | 2021 |
| 卷号 | 9期号:9页码:3177-3182 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31342]  |
| 专题 | 半导体研究所_固态光电信息技术实验室 |
| 推荐引用方式 GB/T 7714 | Wang, Rong; Xu, Jianxing; Zhang, Shiyong; Zhang, Ying; Zheng, Penghui; Cheng, Zhe; Zhang, Lian; Chen, Feng-Xiang; Tong, Xiaodong; Zhang, Yun; Tan, Wei. Reducing the reverse leakage current of AlGaN/GaN heterostructures via low-fluence neutron irradiation[J]. JOURNAL OF MATERIALS CHEMISTRY C,2021,9(9):3177-3182. |
| APA | Wang, Rong; Xu, Jianxing; Zhang, Shiyong; Zhang, Ying; Zheng, Penghui; Cheng, Zhe; Zhang, Lian; Chen, Feng-Xiang; Tong, Xiaodong; Zhang, Yun; Tan, Wei.(2021).Reducing the reverse leakage current of AlGaN/GaN heterostructures via low-fluence neutron irradiation.JOURNAL OF MATERIALS CHEMISTRY C,9(9),3177-3182. |
| MLA | Wang, Rong; Xu, Jianxing; Zhang, Shiyong; Zhang, Ying; Zheng, Penghui; Cheng, Zhe; Zhang, Lian; Chen, Feng-Xiang; Tong, Xiaodong; Zhang, Yun; Tan, Wei."Reducing the reverse leakage current of AlGaN/GaN heterostructures via low-fluence neutron irradiation".JOURNAL OF MATERIALS CHEMISTRY C 9.9(2021):3177-3182. |
入库方式： OAI收割
来源：半导体研究所
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