中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Residual stress distribution and flatness of dislocation-free Te-GaSb (100) substrate

文献类型:期刊论文

作者Zhou, Yuan;   Zhao, Youwen;   Xie, Hui;   Shen, Guiying;   Liu, Jingming;   Yang, Jun
刊名JAPANESE JOURNAL OF APPLIED PHYSICS
出版日期2021
卷号60期号:3页码:35510
源URL[http://ir.semi.ac.cn/handle/172111/31364]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Zhou, Yuan; Zhao, Youwen; Xie, Hui; Shen, Guiying; Liu, Jingming; Yang, Jun. Residual stress distribution and flatness of dislocation-free Te-GaSb (100) substrate[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2021,60(3):35510.
APA Zhou, Yuan; Zhao, Youwen; Xie, Hui; Shen, Guiying; Liu, Jingming; Yang, Jun.(2021).Residual stress distribution and flatness of dislocation-free Te-GaSb (100) substrate.JAPANESE JOURNAL OF APPLIED PHYSICS,60(3),35510.
MLA Zhou, Yuan; Zhao, Youwen; Xie, Hui; Shen, Guiying; Liu, Jingming; Yang, Jun."Residual stress distribution and flatness of dislocation-free Te-GaSb (100) substrate".JAPANESE JOURNAL OF APPLIED PHYSICS 60.3(2021):35510.

入库方式: OAI收割

来源:半导体研究所

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