Understanding homoepitaxial growth of horizontal kinked GaN nanowires
文献类型：期刊论文
| 作者 | Wu, Shaoteng; Yi, Xiaoyan; Tian, Shuang; Zhang, Shuo; Liu, Zhiqiang; Wang, Liancheng; Wang, Junxi; Li, Jinmin |
| 刊名 | NANOTECHNOLOGY
 |
| 出版日期 | 2021 |
| 卷号 | 32期号:9页码:95606 |
| 语种 | 英语 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31352]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Wu, Shaoteng; Yi, Xiaoyan; Tian, Shuang; Zhang, Shuo; Liu, Zhiqiang; Wang, Liancheng; Wang, Junxi; Li, Jinmin. Understanding homoepitaxial growth of horizontal kinked GaN nanowires[J]. NANOTECHNOLOGY,2021,32(9):95606. |
| APA | Wu, Shaoteng; Yi, Xiaoyan; Tian, Shuang; Zhang, Shuo; Liu, Zhiqiang; Wang, Liancheng; Wang, Junxi; Li, Jinmin.(2021).Understanding homoepitaxial growth of horizontal kinked GaN nanowires.NANOTECHNOLOGY,32(9),95606. |
| MLA | Wu, Shaoteng; Yi, Xiaoyan; Tian, Shuang; Zhang, Shuo; Liu, Zhiqiang; Wang, Liancheng; Wang, Junxi; Li, Jinmin."Understanding homoepitaxial growth of horizontal kinked GaN nanowires".NANOTECHNOLOGY 32.9(2021):95606. |
入库方式： OAI收割
来源：半导体研究所
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