A highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire
文献类型：期刊论文
| 作者 | Mu, Jingwei; Huang, Shaoyun; Liu, Zhi-Hai; Li, Weijie; Wang, Ji-Yin; Pan, Dong; Huang, Guang-Yao; Chen, Yuanjie; Zhao, Jianhua; Xu, H. Q. |
| 刊名 | NANOSCALE
 |
| 出版日期 | 2021 |
| 卷号 | 13期号:7页码:3983-3990 |
| 语种 | 英语 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31370]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Mu, Jingwei; Huang, Shaoyun; Liu, Zhi-Hai; Li, Weijie; Wang, Ji-Yin; Pan, Dong; Huang, Guang-Yao; Chen, Yuanjie; Zhao, Jianhua; Xu, H. Q.. A highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire[J]. NANOSCALE,2021,13(7):3983-3990. |
| APA | Mu, Jingwei; Huang, Shaoyun; Liu, Zhi-Hai; Li, Weijie; Wang, Ji-Yin; Pan, Dong; Huang, Guang-Yao; Chen, Yuanjie; Zhao, Jianhua; Xu, H. Q..(2021).A highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire.NANOSCALE,13(7),3983-3990. |
| MLA | Mu, Jingwei; Huang, Shaoyun; Liu, Zhi-Hai; Li, Weijie; Wang, Ji-Yin; Pan, Dong; Huang, Guang-Yao; Chen, Yuanjie; Zhao, Jianhua; Xu, H. Q.."A highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire".NANOSCALE 13.7(2021):3983-3990. |
入库方式： OAI收割
来源：半导体研究所
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