Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers*
文献类型：期刊论文
| 作者 | Li, Yong; Li, Xiao-Ming; Hao, Rui-Ting; Guo, Jie; Zhuang, Yu; Cui, Su-Ning; Wei, Guo-Shuai; Ma, Xiao-Le; Wang, Guo-Wei; Xu, Ying-Qiang; Niu, Zhi-Chuan; Wang, Yao |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2021 |
| 卷号 | 30期号:2页码:28504 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31346]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Li, Yong; Li, Xiao-Ming; Hao, Rui-Ting; Guo, Jie; Zhuang, Yu; Cui, Su-Ning; Wei, Guo-Shuai; Ma, Xiao-Le; Wang, Guo-Wei; Xu, Ying-Qiang; Niu, Zhi-Chuan; Wang, Yao. Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers*[J]. CHINESE PHYSICS B,2021,30(2):28504. |
| APA | Li, Yong; Li, Xiao-Ming; Hao, Rui-Ting; Guo, Jie; Zhuang, Yu; Cui, Su-Ning; Wei, Guo-Shuai; Ma, Xiao-Le; Wang, Guo-Wei; Xu, Ying-Qiang; Niu, Zhi-Chuan; Wang, Yao.(2021).Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers*.CHINESE PHYSICS B,30(2),28504. |
| MLA | Li, Yong; Li, Xiao-Ming; Hao, Rui-Ting; Guo, Jie; Zhuang, Yu; Cui, Su-Ning; Wei, Guo-Shuai; Ma, Xiao-Le; Wang, Guo-Wei; Xu, Ying-Qiang; Niu, Zhi-Chuan; Wang, Yao."Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers*".CHINESE PHYSICS B 30.2(2021):28504. |
入库方式： OAI收割
来源：半导体研究所
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