Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides
文献类型：期刊论文
| 作者 | Jiang, Ke; Sun, Xiaojuan; Shi, Zhiming; Zang, Hang; Ben, Jianwei; Deng, Hui-Xiong; Li, Dabing |
| 刊名 | LIGHT-SCIENCE & APPLICATIONS
 |
| 出版日期 | 2021 |
| 卷号 | 10期号:1页码:69 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31351]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Jiang, Ke; Sun, Xiaojuan; Shi, Zhiming; Zang, Hang; Ben, Jianwei; Deng, Hui-Xiong; Li, Dabing. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides[J]. LIGHT-SCIENCE & APPLICATIONS,2021,10(1):69. |
| APA | Jiang, Ke; Sun, Xiaojuan; Shi, Zhiming; Zang, Hang; Ben, Jianwei; Deng, Hui-Xiong; Li, Dabing.(2021).Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides.LIGHT-SCIENCE & APPLICATIONS,10(1),69. |
| MLA | Jiang, Ke; Sun, Xiaojuan; Shi, Zhiming; Zang, Hang; Ben, Jianwei; Deng, Hui-Xiong; Li, Dabing."Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides".LIGHT-SCIENCE & APPLICATIONS 10.1(2021):69. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。