中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The influence of temperature and TMGa flow rate on the quality of p-GaN

文献类型:期刊论文

作者Cao, Zikun;   Wang, Xiaowei;   Zhao, Degang;   Liang, Feng;   Liu, Zongshun
刊名AIP ADVANCES
出版日期2021
卷号11期号:3页码:35109
源URL[http://ir.semi.ac.cn/handle/172111/31345]  
专题半导体研究所_光电子研究发展中心
推荐引用方式
GB/T 7714
Cao, Zikun; Wang, Xiaowei; Zhao, Degang; Liang, Feng; Liu, Zongshun. The influence of temperature and TMGa flow rate on the quality of p-GaN[J]. AIP ADVANCES,2021,11(3):35109.
APA Cao, Zikun; Wang, Xiaowei; Zhao, Degang; Liang, Feng; Liu, Zongshun.(2021).The influence of temperature and TMGa flow rate on the quality of p-GaN.AIP ADVANCES,11(3),35109.
MLA Cao, Zikun; Wang, Xiaowei; Zhao, Degang; Liang, Feng; Liu, Zongshun."The influence of temperature and TMGa flow rate on the quality of p-GaN".AIP ADVANCES 11.3(2021):35109.

入库方式: OAI收割

来源:半导体研究所

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