Effect of different well growth rates on the luminescence characteristics of InGaN/GaN green quantum well
文献类型：期刊论文
| 作者 | Zhao, Yuntao; Li, Guanghui; Zhang, Shuai; Yi, Linkai; Qi, Haoran; Liang, Feng; Yang, Jing; Zhou, Mei; Shen, Huixing; Zhao, Degang |
| 刊名 | MATERIALS RESEARCH EXPRESS
 |
| 出版日期 | 2021 |
| 卷号 | 8期号:4页码:46201 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31331]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Zhao, Yuntao; Li, Guanghui; Zhang, Shuai; Yi, Linkai; Qi, Haoran; Liang, Feng; Yang, Jing; Zhou, Mei; Shen, Huixing; Zhao, Degang. Effect of different well growth rates on the luminescence characteristics of InGaN/GaN green quantum well[J]. MATERIALS RESEARCH EXPRESS,2021,8(4):46201. |
| APA | Zhao, Yuntao; Li, Guanghui; Zhang, Shuai; Yi, Linkai; Qi, Haoran; Liang, Feng; Yang, Jing; Zhou, Mei; Shen, Huixing; Zhao, Degang.(2021).Effect of different well growth rates on the luminescence characteristics of InGaN/GaN green quantum well.MATERIALS RESEARCH EXPRESS,8(4),46201. |
| MLA | Zhao, Yuntao; Li, Guanghui; Zhang, Shuai; Yi, Linkai; Qi, Haoran; Liang, Feng; Yang, Jing; Zhou, Mei; Shen, Huixing; Zhao, Degang."Effect of different well growth rates on the luminescence characteristics of InGaN/GaN green quantum well".MATERIALS RESEARCH EXPRESS 8.4(2021):46201. |
入库方式： OAI收割
来源：半导体研究所
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