Electric Field Control of the Magnetic Weyl Fermion in an Epitaxial SrRuO3 (111) Thin Film
文献类型:期刊论文
作者 | Lin, Weinan; Liu, Liang; Liu, Qing; Li, Lei; Shu, Xinyu; Li, Changjian; Xie, Qidong; Jiang, Peiheng; Zheng, Xuan; Guo, Rui |
刊名 | ADVANCED MATERIALS
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出版日期 | 2021 |
卷号 | 33期号:36 |
关键词 | TOTAL-ENERGY CALCULATIONS SURFACE SEMIMETAL ANISOTROPY DISCOVERY |
英文摘要 | The magnetic Weyl fermion originates from the time reversal symmetry (TRS)-breaking in magnetic crystalline structures, where the topology and magnetism entangle with each other. Therefore, the magnetic Weyl fermion is expected to be effectively tuned by the magnetic field and electrical field, which holds promise for future topologically protected electronics. However, the electrical field control of the magnetic Weyl fermion has rarely been reported, which is prevented by the limited number of identified magnetic Weyl solids. Here, the electric field control of the magnetic Weyl fermion is demonstrated in an epitaxial SrRuO3 (111) thin film. The magnetic Weyl fermion in the SrRuO3 films is indicated by the chiral anomaly induced magnetotransport, and is verified by the observed Weyl nodes in the electronic structures characterized by the angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. Through the ionic-liquid gating experiment, the effective manipulation of the Weyl fermion by electric field is demonstrated, in terms of the sign-change of the ordinary Hall effect, the nonmonotonic tuning of the anomalous Hall effect, and the observation of the linear magnetoresistance under proper gating voltages. The work may stimulate the searching and tuning of Weyl fermions in other magnetic materials, which are promising in energy-efficient electronics. |
源URL | [http://ir.nimte.ac.cn/handle/174433/21719] ![]() |
专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
作者单位 | 1.Wang, ZM (corresponding author), Chinese Acad Sci, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. 2.Zhong, ZC 3.Wang, ZM (corresponding author), Chinese Acad Sci, Key Lab Magnet Mat & Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. 4.Wang, ZM (corresponding author), Univ Chinese Acad Sci, China Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China. 5.Chen, JS (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore. |
推荐引用方式 GB/T 7714 | Lin, Weinan,Liu, Liang,Liu, Qing,et al. Electric Field Control of the Magnetic Weyl Fermion in an Epitaxial SrRuO3 (111) Thin Film[J]. ADVANCED MATERIALS,2021,33(36). |
APA | Lin, Weinan.,Liu, Liang.,Liu, Qing.,Li, Lei.,Shu, Xinyu.,...&Chen, Jingsheng.(2021).Electric Field Control of the Magnetic Weyl Fermion in an Epitaxial SrRuO3 (111) Thin Film.ADVANCED MATERIALS,33(36). |
MLA | Lin, Weinan,et al."Electric Field Control of the Magnetic Weyl Fermion in an Epitaxial SrRuO3 (111) Thin Film".ADVANCED MATERIALS 33.36(2021). |
入库方式: OAI收割
来源:宁波材料技术与工程研究所
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