Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor (vol 7, 10997, 2017)
文献类型：期刊论文
| 作者 | Dai, Mingzhi; Wang, Weiliang; Wang, Pengjun; Iqbal, Muhammad Zahir; Annabi, Nasim; Amin, Nasir |
| 刊名 | SCIENTIFIC REPORTS
 |
| 出版日期 | 2021 |
| 卷号 | 11期号:1 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/21836]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
| 推荐引用方式 GB/T 7714 | Dai, Mingzhi,Wang, Weiliang,Wang, Pengjun,et al. Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor (vol 7, 10997, 2017)[J]. SCIENTIFIC REPORTS,2021,11(1). |
| APA | Dai, Mingzhi,Wang, Weiliang,Wang, Pengjun,Iqbal, Muhammad Zahir,Annabi, Nasim,&Amin, Nasir.(2021).Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor (vol 7, 10997, 2017).SCIENTIFIC REPORTS,11(1). |
| MLA | Dai, Mingzhi,et al."Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor (vol 7, 10997, 2017)".SCIENTIFIC REPORTS 11.1(2021). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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