One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering
文献类型：期刊论文
| 作者 | Zhang, Ruyi; Li, Xinyan; Bi, Jiachang; Zhang, Shunda; Peng, Shaoqin; Song, Yang; Zhang, Qinghua; Gu, Lin; Duan, Junxi; Cao, Yanwei |
| 刊名 | APL MATERIALS
 |
| 出版日期 | 2021 |
| 卷号 | 9期号:6 |
| 关键词 | OXIDE SEMICONDUCTOR ELECTRON-MOBILITY THIN-FILM MAGNETORESISTANCE FABRICATION SUBSTRATE |
| 英文摘要 | As unique perovskite transparent oxide semiconductors, high-mobility La-doped BaSnO3 films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition. However, it remains a big challenge for magnetron sputtering, a widely applied technique suitable for large-scale fabrication, to grow high-mobility La-doped BaSnO3 films. In this work, we developed a method to synthesize high-mobility epitaxial La-doped BaSnO3 films (with mobility up to 121 cm(2) V-1 s(-1) at the carrier density of similar to 4.0 x 10(20) cm(-3) at room temperature) directly on SrTiO3 single crystal substrates using high-pressure magnetron sputtering. The structural and electrical properties of La-doped BaSnO3 films were characterized by combined high-resolution x-ray diffraction, x-ray photoemission spectroscopy, and temperature-dependent electrical transport measurements. The room-temperature electron mobility of La-doped BaSnO3 films achieved in this work is two to four times higher than the reported values of the films grown by magnetron sputtering. Moreover, in the high carrier density range (n > 3 x 10(20) cm(-3)), the electron mobility value of 121 cm(2) V-1 s(-1) achieved in our work is among the highest values for all reported doped BaSnO3 films. It is revealed that high argon pressure during sputtering plays a vital role in stabilizing the fully relaxed films and inducing oxygen vacancies, which facilitates high mobility at room temperature. Our work provides an easy and economical way to massively synthesize high-mobility transparent conducting films for transparent electronics. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/21852]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
| 作者单位 | 1.Duan, JX (corresponding author), Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China. 2.Cao, YW (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. 3.Zhang, QH (corresponding author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. 4.Cao, YW (corresponding author), Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Zhang, Ruyi,Li, Xinyan,Bi, Jiachang,et al. One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering[J]. APL MATERIALS,2021,9(6). |
| APA | Zhang, Ruyi.,Li, Xinyan.,Bi, Jiachang.,Zhang, Shunda.,Peng, Shaoqin.,...&Cao, Yanwei.(2021).One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering.APL MATERIALS,9(6). |
| MLA | Zhang, Ruyi,et al."One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering".APL MATERIALS 9.6(2021). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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