Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device
文献类型：期刊论文
| 作者 | Lv, Fengzhen; Zhong, Tingting; Qin, Yongfu; Qin, Haijun; Wang, Wenfeng; Liu, Fuchi; Kong, Wenjie |
| 刊名 | NANOMATERIALS
 |
| 出版日期 | 2021 |
| 卷号 | 11期号:6 |
| 关键词 | NEGATIVE DIFFERENTIAL RESISTANCE DOUBLE PEROVSKITE MEMRISTIVE DEVICES THIN-FILMS |
| 英文摘要 | Light-modulated lead-free perovskites-based memristors, combining photoresponse and memory, are promising as multifunctional devices. In this work, lead-free double perovskite Cs2AgBiBr6 films with dense surfaces and uniform grains were prepared by the low-temperature sol-gel method on indium tin oxide (ITO) substrates. A memory device based on a lead-free double perovskite Cs2AgBiBr6 film, Pt/Cs2AgBiBr6/ITO/glass, presents obvious bipolar resistive switching behavior. The R-OFF/R-ON ratio under 445 nm wavelength light illumination is similar to 100 times greater than that in darkness. A long retention capability (>2400 s) and cycle-to-cycle consistency (>500 times) were observed in this device under light illumination. The resistive switching behavior is primarily attributed to the trap-controlled space-charge-limited current mechanism caused by bromine vacancies in the Cs2AgBiBr6 medium layer. Light modulates resistive states by regulating the condition of photo-generated carriers and changing the Schottky-like barrier of the Pt/Cs2AgBiBr6 interface under bias voltage sweeping. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/21857]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
| 作者单位 | 1.Lv, FZ 2.Liu, FC (corresponding author), Guangxi Normal Univ, Sch Phys Sci & Technol, Guangxi Key Lab Nucl Phys & Technol, Guilin 541004, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Lv, Fengzhen,Zhong, Tingting,Qin, Yongfu,et al. Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device[J]. NANOMATERIALS,2021,11(6). |
| APA | Lv, Fengzhen.,Zhong, Tingting.,Qin, Yongfu.,Qin, Haijun.,Wang, Wenfeng.,...&Kong, Wenjie.(2021).Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device.NANOMATERIALS,11(6). |
| MLA | Lv, Fengzhen,et al."Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device".NANOMATERIALS 11.6(2021). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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