Numerical and experimental exploration towards a 26% efficiency rear-junction n-type silicon solar cell with front local-area and rear full-area polysilicon passivated contacts
文献类型：期刊论文
| 作者 | Liu, Zunke; Yang, Zhenhai; Wang, Wei; Yang, Qing; Han, Qingling; Ma, Dian; Cheng, Hao; Lin, Yiran; Zheng, Jingming; Liu, Wei |
| 刊名 | SOLAR ENERGY
 |
| 出版日期 | 2021 |
| 卷号 | 221 |
| 关键词 | RESISTIVITY SIMULATION MODEL |
| 英文摘要 | In this work, structure designs and the corresponding energy loss analysis are conducted to achieve the highefficiency n-type rear-junction solar cells with polysilicon passivated contact. We focus on the front-side structure design of solar cells, considering that the primary efficiency loss of the conventional n-type polysilicon passivated contact cells with boron-diffusion emitter is from the front side. A well-designed rear-junction solar cell with front localized n-type and rear full-area p-type polysilicon passivated contacts is expected to overcome these problems. However, the efficiency of rear-junction solar cells is sensitive to the front-side electrode contact resistivity. To accurately assess the practically achievable efficiency that the current technology can reach, we develop a simple modified TLM with wet-chemical etching to measure the contact resistivity of the n-type polysilicon contact. This method does not require relatively expensive photolithography and reactive ion etching tools and is easy to be used. When the contact resistivity of the front-side localized n-type polysilicon contact reaches 0.002 omega.cm2 with a saturation current density of -10 fA/cm2 in the front-side un-diffused area, the efficiency of the rear-junction n-type solar cell is expected to be -26%, showing its potential for application in mass-production of high-efficiency crystalline silicon solar cells. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/21868]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
| 作者单位 | 1.Zeng, YH 2.Yan, BJ 3.Ye, JC (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Liu, Zunke,Yang, Zhenhai,Wang, Wei,et al. Numerical and experimental exploration towards a 26% efficiency rear-junction n-type silicon solar cell with front local-area and rear full-area polysilicon passivated contacts[J]. SOLAR ENERGY,2021,221. |
| APA | Liu, Zunke.,Yang, Zhenhai.,Wang, Wei.,Yang, Qing.,Han, Qingling.,...&Ye, Jichun.(2021).Numerical and experimental exploration towards a 26% efficiency rear-junction n-type silicon solar cell with front local-area and rear full-area polysilicon passivated contacts.SOLAR ENERGY,221. |
| MLA | Liu, Zunke,et al."Numerical and experimental exploration towards a 26% efficiency rear-junction n-type silicon solar cell with front local-area and rear full-area polysilicon passivated contacts".SOLAR ENERGY 221(2021). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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