Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization
文献类型：期刊论文
| 作者 | Shan, Maocheng; Zhang, Yi; Tian, Ming; Lin, Rongyu; Jiang, Jie'an; Zheng, Zhihua; Zhao, Yongming; Lu, Yi; Feng, Zhechuan; Guo, Wei |
| 刊名 | ACS PHOTONICS
 |
| 出版日期 | 2021 |
| 卷号 | 8期号:5页码:1264-1270 |
| 关键词 | RECOMBINATION DYNAMICS STATES |
| 英文摘要 | We have demonstrated a record short wavelength lasing at 244.63 nm with TE dominant polarization from GaN quantum wells (QWs) at room temperature (RT). The optical threshold of 310 kW/cm(2) is comparable to state-of-the-art AlGaN QW lasers at similar wavelengths. The sample was grown on the AlN/sapphire template pesudomorphically. X-ray diffraction (XRD) shows unambiguous higherorder satellite peaks indicating a sharp interface amid the active region. The excitonic localization was revealed and studied by the photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy at temperatures ranging from 15 K to RT. At 15 K, the multiple-component PL decay curves with the decay time varying from 62.6 to 2.77 ns at different energies confirmed the localized excitons. The peak energy of the temperature-dependent PL spectra exhibited the S-shape behavior; and the weak exciton localization with a small localization energy of 14.3 meV was observed. Therefore, even in the low temperature region, the escape possibility of excitons increased as the temperature rose. As a result, the fwhm of the emission spectra changed significantly when the temperature was below 150 K. Above 150 K, the PL decay shape changed from the two-component exponential decay to the single exponential decay, indicating complete delocalization of excitons. The work demonstrates the weak localization and thus smooth interface in the GaN/AlN active region, which are desirable for DUV lasers operating at RT. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/21913]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
| 作者单位 | 1.Wu, F (corresponding author), Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China. 2.Li, XH (corresponding author), King Abdullah Univ Sci & Technol KAUST, Adv Semicond Lab, Thuwal 23955, Saudi Arabia. 3.Chen, CQ |
| 推荐引用方式 GB/T 7714 | Shan, Maocheng,Zhang, Yi,Tian, Ming,et al. Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization[J]. ACS PHOTONICS,2021,8(5):1264-1270. |
| APA | Shan, Maocheng.,Zhang, Yi.,Tian, Ming.,Lin, Rongyu.,Jiang, Jie'an.,...&Li, Xiaohang.(2021).Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization.ACS PHOTONICS,8(5),1264-1270. |
| MLA | Shan, Maocheng,et al."Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization".ACS PHOTONICS 8.5(2021):1264-1270. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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