Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence
文献类型：期刊论文
| 作者 | Wang, Jingrui; Xia, Zhuge; Fei, Zhuge |
| 刊名 | SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
 |
| 出版日期 | 2021 |
| 卷号 | 22期号:1页码:326-344 |
| 关键词 | RESISTIVE SWITCHING CHARACTERISTICS ELECTRONIC SYNAPSE HIGHLY UNIFORM HIGH ENDURANCE LOW-POWER MEMRISTOR MEMORY RRAM CLASSIFICATION PLASTICITY |
| 英文摘要 | The state-of-the-art artificial intelligence technologies mainly rely on deep learning algorithms based on conventional computers with classical von Neumann computing architectures, where the memory and processing units are separated resulting in an enormous amount of energy and time consumed in the data transfer process. Inspired by the human brain acting like an ultra-highly efficient biological computer, neuromorphic computing is proposed as a technology for hardware implementation of artificial intelligence. Artificial synapses are the main component of a neuromorphic computing architecture. Memristors are considered to be a relatively ideal candidate for artificial synapse applications due to their high scalability and low power consumption. Oxides are most widely used in memristors due to the ease of fabrication and high compatibility with complementary metal-oxide-semiconductor processes. However, oxide memristors suffer from unsatisfactory stability and reliability. Oxide-based hybrid structures can effectively improve the device stability and reliability, therefore providing a promising prospect for the application of oxide memristors to neuromorphic computing. This work reviews the recent advances in the development of hybrid oxide memristive synapses. The discussion is organized according to the blending schemes as well as the working mechanisms of hybrid oxide memristors. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/21927]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
| 作者单位 | Fei, ZG (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Wang, Jingrui,Xia, Zhuge,Fei, Zhuge. Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence[J]. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,2021,22(1):326-344. |
| APA | Wang, Jingrui,Xia, Zhuge,&Fei, Zhuge.(2021).Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence.SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,22(1),326-344. |
| MLA | Wang, Jingrui,et al."Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence".SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 22.1(2021):326-344. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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