Dopant diffusion through ultrathin AlOx and AlOx/SiOx tunnel layer in TOPCon structure and its impact on the passivation quality on c-Si solar cells
文献类型：期刊论文
| 作者 | Lu, Linna; Zeng, Yuheng; Liao, Mingdun; Zheng, Jingming; Lin, Yiran; Feng, Mengmeng; Zhi, Yuyan; He, Haiyan; Ding, Waner; Shou, Chunhui |
| 刊名 | SOLAR ENERGY MATERIALS AND SOLAR CELLS
 |
| 出版日期 | 2021 |
| 卷号 | 223 |
| 关键词 | SILICON-OXIDE SELECTIVE CONTACTS ALUMINUM-OXIDE REAR CONTACTS N-TYPE BORON POLYSILICON TEMPERATURE TRANSPORT |
| 英文摘要 | A comparison study of ultrathin atomic layer deposited AlOx, wet-chemically oxidized SiOx, and their combination as the tunnel layer in TOPCon structure with both B-doped and P-doped poly-Si contact layers on n-type c-Si wafers was carried out. The passivation quality with the three types of tunnel layers was examined as a function of thickness and annealing temperature. Ideally, the high density of negative fixed charge in the AlOx is expected to provide a positive benefit on the passivation quality with p-type poly-Si as the contact layer, however, it is surprisingly observed that the AlOx and AlOx/SiOx do not yield a better passivation than the SiOx. Searching for the mechanisms behind, an interesting phenomenon is observed that the AlOx, especially the AlOx/SiOx bi-layer, significantly enhances B diffusion and suppresses P diffusion. It is also found a remarkable accumulation of B in the AlOx and AlOx/SiOx region, forming a reservoir for B diffusion. Furthermore, the free carrier assistant extrinsic diffusion is an additional factor for the enhanced B and retarded P diffusions by the AlOx/SiOx. The enhanced B diffusion causes extra Auger recombination as well as recombination through B-O pair defects and degrades the p-TOPCon passivation quality; additionally, a quantity of Al diffuse into the c-Si wafer could be another potential factor degrading passivation quality, because Al forms deep-level defects and induces a significant SRH recombination. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/21955]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
| 作者单位 | 1.Qin, GH (corresponding author), Zhejiang Energy Grp R&D, Hangzhou 310003, Zhejiang, Peoples R China. 2.Ye, JC (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. 3.Yan, BJ |
| 推荐引用方式 GB/T 7714 | Lu, Linna,Zeng, Yuheng,Liao, Mingdun,et al. Dopant diffusion through ultrathin AlOx and AlOx/SiOx tunnel layer in TOPCon structure and its impact on the passivation quality on c-Si solar cells[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2021,223. |
| APA | Lu, Linna.,Zeng, Yuheng.,Liao, Mingdun.,Zheng, Jingming.,Lin, Yiran.,...&Ye, Jichun.(2021).Dopant diffusion through ultrathin AlOx and AlOx/SiOx tunnel layer in TOPCon structure and its impact on the passivation quality on c-Si solar cells.SOLAR ENERGY MATERIALS AND SOLAR CELLS,223. |
| MLA | Lu, Linna,et al."Dopant diffusion through ultrathin AlOx and AlOx/SiOx tunnel layer in TOPCon structure and its impact on the passivation quality on c-Si solar cells".SOLAR ENERGY MATERIALS AND SOLAR CELLS 223(2021). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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