Efficient Carrier Recombination in InGaN Pyramidal mu-LEDs Obtained through Selective Area Growth
文献类型：期刊论文
| 作者 | Jiang, Jie'an; Xu, Houqiang; Chen, Li; Yan, Long; Hoo, Jason; Guo, Shiping; Zeng, Yuheng; Guo, Wei; Ye, Jichun |
| 刊名 | PHOTONICS
 |
| 出版日期 | 2021 |
| 卷号 | 8期号:5 |
| 关键词 | LIGHT-EMITTING-DIODES GAN NANOWIRES MODE NANOROD LUMINESCENCE MORPHOLOGY NONPOLAR ARRAYS LASERS LAYER |
| 英文摘要 | Pyramid-shaped InGaN/GaN micro-light-emitting diodes (mu-LEDs) were grown on a sapphire substrate using the selective area growth technique. A stable emission wavelength of a single mu-LED pyramid at 412 nm was observed under an injection current from 0.05 to 20 mA, despite the non-uniformity of the thickness and composition of the multiple quantum wells (MQWs) on the sidewall. An efficient carrier confinement and, thus, a high luminescence intensity were demonstrated in the middle of the sidewall through spatial-resolved cathodoluminescence (CL) characterization and were predicted by theoretical simulations. An ultra-high output power density of 1.37 kW/cm(2) was obtained from the single mu-LED pyramid, illustrating its great potential for application in high-brightness micro-displays and in virtual reality and augmented reality (VR and AR) applications. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/21961]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
| 作者单位 | 1.Guo, W (corresponding author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China. 2.Guo, W (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Jiang, Jie'an,Xu, Houqiang,Chen, Li,et al. Efficient Carrier Recombination in InGaN Pyramidal mu-LEDs Obtained through Selective Area Growth[J]. PHOTONICS,2021,8(5). |
| APA | Jiang, Jie'an.,Xu, Houqiang.,Chen, Li.,Yan, Long.,Hoo, Jason.,...&Ye, Jichun.(2021).Efficient Carrier Recombination in InGaN Pyramidal mu-LEDs Obtained through Selective Area Growth.PHOTONICS,8(5). |
| MLA | Jiang, Jie'an,et al."Efficient Carrier Recombination in InGaN Pyramidal mu-LEDs Obtained through Selective Area Growth".PHOTONICS 8.5(2021). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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