Direct demonstration of carrier distribution and recombination within step-bunched UV-LEDs
文献类型：期刊论文
| 作者 | Xu, Houqiang; Jiang, Jiean; Chen, Li; Hoo, Jason; Yan, Long; Guo, Shiping; Shen, Cai; Wei, Yanping; Shao, Hua; Zhang, Zi-Hui |
| 刊名 | PHOTONICS RESEARCH
 |
| 出版日期 | 2021 |
| 卷号 | 9期号:5页码:764-771 |
| 英文摘要 | AlGaN-based solid state UV emitters have many advantages over conventional UV sources. However, UV-LEDs still suffer from numerous challenges, including low quantum efficiency compared to their blue LED counterparts. One of the inherent reasons is a lack of carrier localization effect inside fully miscible AlGaN alloys. In the pursuit of phase separation and carrier localization inside the active region of AlGaN UV-LED, utilization of highly misoriented substrates proves to be useful, yet the carrier distribution and recombination mechanism in such structures has seldom been reported. In this paper, a UV-LED with step-bunched surface morphology was designed and fabricated, and the internal mechanism of high internal quantum efficiency was studied in detail. The correlation between microscale current distribution and surface morphology was provided, directly demonstrating that current prefers to flow through the step edges of the epitaxial layers. Experimental results were further supported by numerical simulation. It was found that efficient radiative recombination centers were formed in the inclined quantum well regions. A schematic three-dimensional energy band structure of the multiple quantum wells (MQWs) across the step was proposed and helps in further understanding the luminescence behavior of LEDs grown on misoriented substrates. Finally, a general principle to achieve carrier localization was proposed, which is valid for most ternary III-V semiconductors exhibiting phase separation. (C) 2021 Chinese Laser Press |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/21962]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
| 作者单位 | 1.Guo, W (corresponding author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China. 2.Guo, W (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Xu, Houqiang,Jiang, Jiean,Chen, Li,et al. Direct demonstration of carrier distribution and recombination within step-bunched UV-LEDs[J]. PHOTONICS RESEARCH,2021,9(5):764-771. |
| APA | Xu, Houqiang.,Jiang, Jiean.,Chen, Li.,Hoo, Jason.,Yan, Long.,...&Ye, Jichun.(2021).Direct demonstration of carrier distribution and recombination within step-bunched UV-LEDs.PHOTONICS RESEARCH,9(5),764-771. |
| MLA | Xu, Houqiang,et al."Direct demonstration of carrier distribution and recombination within step-bunched UV-LEDs".PHOTONICS RESEARCH 9.5(2021):764-771. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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