Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer
文献类型：期刊论文
| 作者 | Chen, Li; Dai, Yijun; Li, Liang; Jiang, Jiean; Xu, Houqiang; Li, Kuang-hui; Ng, Tien Khee; Cui, Mei; Guo, Wei; Sun, Haiding |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
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| 出版日期 | 2021 |
| 卷号 | 861 |
| 英文摘要 | In this work, we report a significantly boosted defect-insensitive ultraviolet emission from InGaN/GaN multiple quantum wells (MQWs) grown on patterned AlN nucleation layer (NL) compared to samples grown on uniform NL. Carrier localization is clearly illustrated for MQWs grown on patterned AlN NL as evidenced by an S-shape profile from temperature-dependent photoluminescence characterization. The underlying mechanism for the carrier localization is demonstrated to correlate with partial relaxation of compressive strains inside epitaxial thin films. This work illustrates that carrier localization can be achieved in MQWs with very low indium content by the adoption of patterned NL during growth, and provides a promising route towards the realization of high-efficiency ultraviolet emitter. (C) 2020 Published by Elsevier B.V. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/22004]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
| 作者单位 | 1.Sun, HD (corresponding author), Univ Sci & Technol China, Sch Microelect, Hefei 230026, Anhui, Peoples R China. 2.Ye, JC (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. 3.Guo, W |
| 推荐引用方式 GB/T 7714 | Chen, Li,Dai, Yijun,Li, Liang,et al. Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2021,861. |
| APA | Chen, Li.,Dai, Yijun.,Li, Liang.,Jiang, Jiean.,Xu, Houqiang.,...&Ye, Jichun.(2021).Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer.JOURNAL OF ALLOYS AND COMPOUNDS,861. |
| MLA | Chen, Li,et al."Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer".JOURNAL OF ALLOYS AND COMPOUNDS 861(2021). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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