Role of Interface Induced Gap States in Polar AlxGa1-xN (0 <= x <= 1) Schottky Diodes
文献类型：期刊论文
| 作者 | Jadhav, Aakash; Dai, Yijun; Upadhyay, Prashant; Guo, Wei; Sarkar, Biplab |
| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
 |
| 出版日期 | 2021 |
| 卷号 | 50期号:6页码:3731-3738 |
| 英文摘要 | Barrier height at the interface between metal and polar AlxGa1-xN (0 <= x <= 1) epitaxial films was investigated using X-ray photoelectron spectroscopy and interface induced gap states (IFIGS) model. The opposite nature of polarization charge yields a significantly lower barrier height in N-polar AlxGa1-xN surface compared to the III-polar counterpart. Accordingly, IFIGS model indicate that III-polar AlxGa1-xN films are advantageous for Schottky contact formation for x < 0.3, whereas N-polar films offer a significantly lower knee voltage and ON-state resistance than the III-polar counterpart for x >= 0.3. Furthermore, N-polar AlxGa1-xN films are expected to offer a lower ohmic contact resistance than the III-polar counterpart for all values of x. The analysis performed in this work highlight the importance of N-polar Al-rich AlxGa1-xN epitaxial films for extending the figures of merit in future ultra-wide band gap semiconductor Schottky diodes. |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/22012]  |
| 专题 | 中国科学院宁波材料技术与工程研究所 2021专题_期刊论文 |
| 作者单位 | Sarkar, B (corresponding author), Indian Inst Technol Roorkee, Dept Elect & Commun Engn, Roorkee 247667, Uttar Pradesh, India. |
| 推荐引用方式 GB/T 7714 | Jadhav, Aakash,Dai, Yijun,Upadhyay, Prashant,et al. Role of Interface Induced Gap States in Polar AlxGa1-xN (0 <= x <= 1) Schottky Diodes[J]. JOURNAL OF ELECTRONIC MATERIALS,2021,50(6):3731-3738. |
| APA | Jadhav, Aakash,Dai, Yijun,Upadhyay, Prashant,Guo, Wei,&Sarkar, Biplab.(2021).Role of Interface Induced Gap States in Polar AlxGa1-xN (0 <= x <= 1) Schottky Diodes.JOURNAL OF ELECTRONIC MATERIALS,50(6),3731-3738. |
| MLA | Jadhav, Aakash,et al."Role of Interface Induced Gap States in Polar AlxGa1-xN (0 <= x <= 1) Schottky Diodes".JOURNAL OF ELECTRONIC MATERIALS 50.6(2021):3731-3738. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。